- 专利标题： SILICON COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
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申请号： US18209583申请日： 2023-06-14
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公开(公告)号： US20230406822A1公开(公告)日： 2023-12-21
- 发明人: Sunhye HWANG , Sunggi KIM , Yeonghun KIM , Gyunsang LEE , Jihyun LEE , Gyuhee PARK , Seung SON , Younjoung CHO , Byungkeun HWANG
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： DNF Co., Ltd.
- 当前专利权人： DNF Co., Ltd.
- 当前专利权人地址： KR Daejeon
- 优先权： KR 20220074337 2022.06.17
- 主分类号： C07D207/46
- IPC分类号： C07D207/46 ; C07D265/32 ; C07D403/12 ; H01L21/02
摘要：
A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):
R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q, Chemical Formula (1)
wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.
R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q, Chemical Formula (1)
wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.
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