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公开(公告)号：US11827650B2
公开(公告)日：2023-11-28
申请号：US16760417
申请日：2018-11-01
申请人： DNF CO., LTD.
发明人： Myong Woon Kim , Sang Ick Lee , Sung Woo Cho , Mi Jeong Han , Haeng Don Lim
IPC分类号： C07F15/00 , C23C16/18 , H01L21/02 , H01L21/3205 , C23C16/455 , C23C16/50 , C23C16/56 , H01L21/285 , H01L21/768
CPC分类号： C07F15/0046 , C23C16/18 , C23C16/45527 , C23C16/45536 , C23C16/45553 , C23C16/50 , C23C16/56 , H01L21/0228 , H01L21/285 , H01L21/28556 , H01L21/32051 , H01L21/76843
摘要： Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.
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公开(公告)号：US20230307227A1
公开(公告)日：2023-09-28
申请号：US18189556
申请日：2023-03-24
发明人： Sunhye HWANG , Sung Gi KIM , Jihyun LEE , Yujin CHO , Seung SON , Gyun Sang LEE , Younjoung CHO , Byungkeun HWANG
IPC分类号： H01L21/02 , C23C16/455 , C23C16/44 , C23C16/40
CPC分类号： H01L21/02216 , C23C16/45553 , H01L21/02164 , C23C16/4408 , C23C16/401
摘要： Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.-
公开(公告)号：US11749522B2
公开(公告)日：2023-09-05
申请号：US17572509
申请日：2022-01-10
申请人： DNF CO., LTD.
发明人： Sung Gi Kim , Jeong Joo Park , Joong Jin Park , Se Jin Jang , Byeong-Il Yang , Sang-Do Lee , Sam Dong Lee , Sang Ick Lee , Myong Woon Kim
IPC分类号： H01L21/02 , C23C16/32 , C01B33/18 , C01B21/068 , C07F7/10 , C23C16/455 , C23C16/50 , C23C16/40 , C23C16/34 , C23C16/30 , C23C16/36 , C09D1/00
CPC分类号： H01L21/02208 , C01B21/068 , C01B33/183 , C07F7/10 , C09D1/00 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/401 , C23C16/4554 , C23C16/50 , H01L21/0214 , H01L21/0217 , H01L21/0228 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/02271 , H01L21/02274
摘要： Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
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公开(公告)号：US20220275010A1
公开(公告)日：2022-09-01
申请号：US17753170
申请日：2020-08-13
申请人： DNF CO., LTD.
发明人： Se Jin JANG , Sung Gi KIM , Jeong Joo PARK , Tae Seok BYUN , Yong Hee KWONE , Yeong Hun KIM , Haengdon LIM , Sang Yong JEON , Sang Ick LEE
IPC分类号： C07F7/21 , C23C16/34 , C23C16/40 , C23C16/455
摘要： Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.
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公开(公告)号：US11358974B2
公开(公告)日：2022-06-14
申请号：US16499196
申请日：2018-03-28
申请人： DNF CO., LTD.
发明人： Sung Gi Kim , Jeong Joo Park , Joong Jin Park , Se Jin Jang , Byeong-il Yang , Sang-Do Lee , Sam Dong Lee , Sang Ick Lee , Myong Woon Kim
IPC分类号： C07F7/02 , C23C16/30 , C23C16/34 , H01L21/02 , C23C16/50 , C23C16/455 , C23C16/32 , C23C16/36 , C23C16/40 , C07F7/10 , C08G77/62 , C08L83/14
摘要： Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.
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6.发明申请公开(公告)号：US20200231610A1
公开(公告)日：2020-07-23
申请号：US16554926
申请日：2019-08-29
发明人： Seung-Min RYU , Myong Woon KIM , Younsoo KIM , Sang Ick LEE , Jaesoon LIM , Younjoung CHO , Jun Hee CHO , Won Mook CHAE
IPC分类号： C07F7/22 , C23C16/40 , C23C16/448 , H01L21/02 , H01L21/285
摘要： A tin compound, a tin precursor compound for forming a tin-containing layer, and a method of forming a thin layer, the tin compound being represented by Formula 1: wherein R1, R2, R3, R4, R5, R6, and R7 are each independently hydrogen, a linear alkyl group having 1 to 4 carbon atoms, or a branched alkyl group having 3 or 4 carbon atoms.
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公开(公告)号：US10214610B2
公开(公告)日：2019-02-26
申请号：US14913194
申请日：2014-08-22
申请人： DNF CO., LTD. , SKC CO., LTD. , Joo Hyeon Park
发明人： Joo Hyeon Park , Myong Woon Kim , Sang Ick Lee , Tae Seok Byun , Seung Son , Yong Hee Kwone , In Kyung Jung , Joon Sung Ryou
IPC分类号： C08G8/04 , G03F7/11 , H01L51/00 , G03F7/09 , C08G61/12 , C09D161/06 , H01L21/027
摘要： The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.
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8.发明公开公开(公告)号：US20230304155A1
公开(公告)日：2023-09-28
申请号：US18189751
申请日：2023-03-24
发明人： Sunhye HWANG , Sung Gi Kim , Jihyun Lee , Yujin Cho , Seung Son , Gyun Sang Lee , Younjoung Cho , Byungkeun Hwang
IPC分类号： C23C16/455 , C23C16/40 , C23C16/44
CPC分类号： C23C16/45553 , C23C16/401 , C23C16/4408 , C23C16/45527
摘要： Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R2 may be an alkyl group of 1˜6 carbon atoms. R3 may be an alkyl group of 1˜6 carbon atoms.-
公开(公告)号：US20220181578A1
公开(公告)日：2022-06-09
申请号：US17435350
申请日：2020-03-06
申请人： DNF CO., LTD
发明人： Myoung Woon KIM , Sang Ick LEE , Se Jin JANG , Sung Gi KIM , Jeong Joo PARK , Won Mook CHAE , A Ra CHO , Byeong il YANG , Joong Jin PARK , Gun Joo PARK , Sam Dong LEE , Haeng don LIM , Sang Yong JEON
IPC分类号： H01L51/52 , C23C16/455 , C23C16/40 , H01L51/56 , C23C16/56
摘要： The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.
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公开(公告)号：US11319333B2
公开(公告)日：2022-05-03
申请号：US16606168
申请日：2018-04-19
申请人： DNF CO., LTD
发明人： Sung Gi Kim , Se Jin Jang , Byeong-il Yang , Joong Jin Park , Sang-Do Lee , Jeong Joo Park , Sam Dong Lee , Gun-Joo Park , Sang Ick Lee , Myong Woon Kim
IPC分类号： C07F7/10 , C23C16/40 , C23C16/455 , C23C16/50
摘要： Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.
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