公开(公告)号：US11749522B2

公开(公告)日：2023-09-05

申请号：US17572509

申请日：2022-01-10

申请人： DNF CO., LTD.

发明人： Sung Gi Kim ,  Jeong Joo Park ,  Joong Jin Park ,  Se Jin Jang ,  Byeong-Il Yang ,  Sang-Do Lee ,  Sam Dong Lee ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： H01L21/02 ,  C23C16/32 ,  C01B33/18 ,  C01B21/068 ,  C07F7/10 ,  C23C16/455 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C23C16/36 ,  C09D1/00

CPC分类号： H01L21/02208 ,  C01B21/068 ,  C01B33/183 ,  C07F7/10 ,  C09D1/00 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/50 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02274

摘要： Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：US11358974B2

公开(公告)日：2022-06-14

申请号：US16499196

申请日：2018-03-28

申请人： DNF CO., LTD.

发明人： Sung Gi Kim ,  Jeong Joo Park ,  Joong Jin Park ,  Se Jin Jang ,  Byeong-il Yang ,  Sang-Do Lee ,  Sam Dong Lee ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/02 ,  C23C16/30 ,  C23C16/34 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/32 ,  C23C16/36 ,  C23C16/40 ,  C07F7/10 ,  C08G77/62 ,  C08L83/14

摘要： Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

公开(公告)号：US11319333B2

公开(公告)日：2022-05-03

申请号：US16606168

申请日：2018-04-19

申请人： DNF CO., LTD

发明人： Sung Gi Kim ,  Se Jin Jang ,  Byeong-il Yang ,  Joong Jin Park ,  Sang-Do Lee ,  Jeong Joo Park ,  Sam Dong Lee ,  Gun-Joo Park ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/10 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

摘要： Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

公开(公告)号：US10202407B2

公开(公告)日：2019-02-12

申请号：US15110692

申请日：2015-01-08

申请人： DNF CO.,LTD.

发明人： Se Jin Jang ,  Sang-Do Lee ,  Jong Hyun Kim ,  Sung Gi Kim ,  Do Yeon Kim ,  Byeong-il Yang ,  Jang Hyeon Seok ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/10 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02

摘要： Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

公开(公告)号：US10894799B2

公开(公告)日：2021-01-19

申请号：US16606728

申请日：2018-04-19

申请人： DNF CO., LTD

发明人： Sung Gi Kim ,  Se Jin Jang ,  Byeong-il Yang ,  Joong Jin Park ,  Sang-Do Lee ,  Jeong Joo Park ,  Sam Dong Lee ,  Gun-Joo Park ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/02 ,  C07F7/10 ,  H01L21/02 ,  C23C16/455 ,  C23C16/24

摘要： Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

公开(公告)号：US09586979B2

公开(公告)日：2017-03-07

申请号：US14896156

申请日：2014-06-05

申请人： DNF CO., LTD.

发明人： Se Jin Jang ,  Sang-Do Lee ,  Sung Gi Kim ,  Byeong-il Yang ,  Jang Hyeon Seok ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/02 ,  C07F7/10

CPC分类号： C07F7/10

摘要： Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

摘要翻译： 提供了一种新的氨基甲硅烷基胺化合物及其制备方法和使用该方法的含硅薄膜，其中氨基甲硅烷基胺化合物具有热稳定性和高挥发性，并保持在液态 室温下，在处理容易的压力下，通过各种沉积方法形成具有高纯度和优异的物理和电学性质的含硅薄膜。

公开(公告)号：US20160326193A1

公开(公告)日：2016-11-10

申请号：US15110707

申请日：2015-01-08

申请人： DNF CO.,LTD.

发明人： Se Jin Jang ,  Byeong-il Yang ,  Sung Gi Kim ,  Jong Hyun Kim ,  Do Yeon Kim ,  Sang-Do Lee ,  Jang Hyeon Seok ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/21 ,  H01L21/02

CPC分类号： C07F7/21 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

摘要翻译： 提供了一种新的环二硅氮烷衍生物及其制备方法，以及使用该方法的含硅薄膜，其中，具有热稳定性，挥发性高，反应性高的环状二硅氮烷衍生物在室温下以液态存在， 在处理容易的压力下，可以通过各种沉积方法形成具有优异物理和电学性能的高纯度含硅薄膜。

公开(公告)号：US20160333030A1

公开(公告)日：2016-11-17

申请号：US15110692

申请日：2015-01-08

申请人： DNF CO.,LTD.

发明人： Se Jin Jang ,  Sang-Do Lee ,  Jong Hyun Kim ,  Sung Gi Kim ,  Do Yeon Kim ,  Byeong-il Yang ,  Jang Hyeon Seok ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/10

CPC分类号： C07F7/10 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

摘要翻译： 提供了一种新的三乙硅烷胺衍生物及其制备方法，以及使用其的含硅薄膜，其中作为具有热稳定性，高挥发性和高反应性的化合物的三甲硅烷基胺衍生物存在于 可以在室温下和处理压力下的液态，可以通过各种沉积方法形成具有优异的物理和电学性能的高纯度含硅薄膜。

公开(公告)号：US09916974B2

公开(公告)日：2018-03-13

申请号：US15317920

申请日：2015-06-04

申请人： DNF CO., LTD.

发明人： Se Jin Jang ,  Sang-Do Lee ,  Jong Hyun Kim ,  Sung Gi Kim ,  Sang Yong Jeon ,  Byeong-il Yang ,  Jang Hyeon Seok ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： H01L21/02 ,  C23C16/455 ,  C01B21/068 ,  C07F7/10 ,  C23C16/34

CPC分类号： H01L21/02219 ,  C01B21/068 ,  C07F7/10 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

公开(公告)号：US09809608B2

公开(公告)日：2017-11-07

申请号：US15110707

申请日：2015-01-08

申请人： DNF CO., LTD.

发明人： Se Jin Jang ,  Byeong-il Yang ,  Sung Gi Kim ,  Jong Hyun Kim ,  Do Yeon Kim ,  Sang-Do Lee ,  Jang Hyeon Seok ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： C07F7/00 ,  C07F7/21 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC分类号： C07F7/21 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.