公开(公告)号：US20230307227A1

公开(公告)日：2023-09-28

申请号：US18189556

申请日：2023-03-24

申请人： Samsung Electronics Co., Ltd. ,  DNF Co., Ltd.

发明人： Sunhye HWANG ,  Sung Gi KIM ,  Jihyun LEE ,  Yujin CHO ,  Seung SON ,  Gyun Sang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

CPC分类号： H01L21/02216 ,  C23C16/45553 ,  H01L21/02164 ,  C23C16/4408 ,  C23C16/401

摘要： Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.

公开(公告)号：US20160200853A1

公开(公告)日：2016-07-14

申请号：US14913194

申请日：2014-08-22

申请人： Joo Hyeon PARK ,  DNF CO.,LTD. ,  SKC CO., LTD.

发明人： Joo Hyeon PARK ,  Myong Woon KIM ,  Sang Ick LEE ,  Tae Seok BYUN ,  Seung SON ,  Yong Hee KWONE ,  In Kyung JUNG ,  Joon Sung RYOU

IPC分类号： C08G8/04 ,  G03F7/11 ,  H01L51/00

CPC分类号： C08G8/04 ,  C08G61/12 ,  C08G2261/12 ,  C08G2261/124 ,  C08G2261/135 ,  C08G2261/3424 ,  C08G2261/344 ,  C08G2261/76 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0271 ,  H01L51/0035 ,  H01L51/0039 ,  C08K5/3445

摘要： The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.

摘要翻译： 本发明涉及一种新型多用途聚合物和含有该聚合物的组合物。 本发明的聚合物和组合物对于制备具有非常好的机械和光学性能的半导体器件非常有用。

公开(公告)号：US20230406822A1

公开(公告)日：2023-12-21

申请号：US18209583

申请日：2023-06-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sunhye HWANG ,  Sunggi KIM ,  Yeonghun KIM ,  Gyunsang LEE ,  Jihyun LEE ,  Gyuhee PARK ,  Seung SON ,  Younjoung CHO ,  Byungkeun HWANG

IPC分类号： C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/02

CPC分类号： C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/0214 ,  H01L21/02219 ,  H01L21/02216 ,  H01L21/0228

摘要： A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):


R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q,  Chemical Formula (1)



wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.

公开(公告)号：US20230407051A1

公开(公告)日：2023-12-21

申请号：US18206187

申请日：2023-06-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jihyun LEE ,  Sunggi KIM ,  Yujin CHO ,  Sunhye HWANG ,  Seung SON ,  Gyunsang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC分类号： C08K5/5435 ,  C23C16/40 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

CPC分类号： C08K5/5435 ,  C23C16/401 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

摘要： A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):