公开(公告)号：US20230307227A1

公开(公告)日：2023-09-28

申请号：US18189556

申请日：2023-03-24

申请人： Samsung Electronics Co., Ltd. ,  DNF Co., Ltd.

发明人： Sunhye HWANG ,  Sung Gi KIM ,  Jihyun LEE ,  Yujin CHO ,  Seung SON ,  Gyun Sang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

CPC分类号： H01L21/02216 ,  C23C16/45553 ,  H01L21/02164 ,  C23C16/4408 ,  C23C16/401

摘要： Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.

公开(公告)号：US20230407051A1

公开(公告)日：2023-12-21

申请号：US18206187

申请日：2023-06-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jihyun LEE ,  Sunggi KIM ,  Yujin CHO ,  Sunhye HWANG ,  Seung SON ,  Gyunsang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC分类号： C08K5/5435 ,  C23C16/40 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

CPC分类号： C08K5/5435 ,  C23C16/401 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

摘要： A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):

公开(公告)号：US20240213017A1

公开(公告)日：2024-06-27

申请号：US18228220

申请日：2023-07-31

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Younghun SUNG ,  Sunhye HWANG ,  Sangho RHA ,  Seungjae SIM ,  Younseok CHOI ,  Byungkeun HWANG ,  Youn Joung CHO

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/311

CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H10B43/27

摘要： A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a Si—H functional group, and a C1-C10 oxy group or a C1-C10 organoamino group.

公开(公告)号：US20240145303A1

公开(公告)日：2024-05-02

申请号：US18378369

申请日：2023-10-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sunhye HWANG ,  Hyeonggeun LIM ,  Byungkeun HWANG ,  Younjoung CHO

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/321

CPC分类号： H01L21/76883 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/321

摘要： A selective thin film formation method, comprising forming a structure on a substrate in which a first material film including silicon atoms and oxygen atoms and a second material film different from the first material film are exposed, selectively forming an inhibitor liner only on an exposed surface of the first material film among the first material film and the second material film by applying a compound represented by XmSi(NR1R2)n or (XaR3)mSi(NR1R2)n to the structure, and selectively forming a third material film only on the exposed surface of the second material film among the first material film and the second material film. X is a halogen atom, R1, R2, and R3 are each independently an alkyl group, an alkenyl group, an allyl group, or a heterocyclic group, a, m, and n are each independently an integer of 1 to 3, and m+n=4.

公开(公告)号：US20230406822A1

公开(公告)日：2023-12-21

申请号：US18209583

申请日：2023-06-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sunhye HWANG ,  Sunggi KIM ,  Yeonghun KIM ,  Gyunsang LEE ,  Jihyun LEE ,  Gyuhee PARK ,  Seung SON ,  Younjoung CHO ,  Byungkeun HWANG

IPC分类号： C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/02

CPC分类号： C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/0214 ,  H01L21/02219 ,  H01L21/02216 ,  H01L21/0228

摘要： A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):


R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q,  Chemical Formula (1)



wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.