公开(公告)号：US20240196594A1

公开(公告)日：2024-06-13

申请号：US18478978

申请日：2023-09-29

Applicant: Samsung Electronics Co .,LTD

Inventor： Hyeri AN ,  Dongsik Park ,  Sooho Shain ,  Joonsuk Park ,  Keonhee Park ,  Gaeun Lee ,  Jihoon Chang ,  Yujin Cho ,  Hana Cho

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/01

Abstract: A semiconductor device includes a switching element, and a data storage structure electrically connected to the switching element. The data storage structure includes first electrodes, a second electrode, and a dielectric layer between the first electrodes and the second electrode. The second electrode includes a compound semiconductor layer doped with an impurity element, the compound semiconductor layer includes two or more elements and includes a semiconductor material doped with the impurity element, the two or more elements include a first element and a second element, the first element is silicon (Si), and a concentration of the impurity element in the compound semiconductor layer is in a range of about 0.1 at % to about 5 at %, and a concentration of the first element in the compound semiconductor layer is in a range of about 10 at % to about 15 at %.

公开(公告)号：US20250142814A1

公开(公告)日：2025-05-01

申请号：US18667445

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghyeok Son ,  Jeongil Seo ,  Donghun Lee ,  Seungmo Kang ,  Seung Joo Lee ,  Yujin Cho ,  Seongjun Choi

IPC: H10B12/00

Abstract: A semiconductor device includes an interconnection line, an insulating layer on the interconnection line and having an opening exposing a top surface of the interconnection line, and a redistribution pattern extending into the opening and electrically connected to the interconnection line at a bottom surface of the opening. The interconnection line is configured to provide a current path in a first direction in a region adjacent to the redistribution pattern. The opening comprises a first side surface facing the first direction. A corner region of the opening protrudes away from or is recessed towards the opening at an end portion of the first side surface of the opening when viewed in plan view.

公开(公告)号：US20230304155A1

公开(公告)日：2023-09-28

申请号：US18189751

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye HWANG ,  Sung Gi Kim ,  Jihyun Lee ,  Yujin Cho ,  Seung Son ,  Gyun Sang Lee ,  Younjoung Cho ,  Byungkeun Hwang

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C23C16/401 ,  C23C16/4408 ,  C23C16/45527

Abstract: Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R2 may be an alkyl group of 1˜6 carbon atoms. R3 may be an alkyl group of 1˜6 carbon atoms.