知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.019 秒)

    CAPACITOR AND DRAM DEVICE INCLUDING THE SAME
    2.
    发明申请
    CAPACITOR AND DRAM DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220093603A1

    公开(公告)日：2022-03-24

    申请号：US17222006

    申请日：2021-04-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Cheoljin CHO ,  Jaesoon LIM ,  Jaehyoung CHOI ,  Jungmin PARK

    IPC分类号： H01L27/108 ,  H01L49/02

    摘要： A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.

    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240162281A1

    公开(公告)日：2024-05-16

    申请号：US18474072

    申请日：2023-09-25

    申请人： Samsung Electronics Co., Ltd.

    发明人： Intak JEON ,  Jaesoon LIM ,  Hanjin LIM ,  Hyungsuk JUNG

    IPC分类号： H10B12/00

    CPC分类号： H01L28/90 ,  H10B12/315 ,  H10B12/482 ,  H10B12/488

    摘要： A semiconductor device may include a substrate; a plurality of lower electrodes on the substrate; at least one supporter layer in contact with the plurality of lower electrodes; a dielectric layer on the plurality of lower electrodes and the at least one supporter layer; and an upper electrode on the dielectric layer. Each of the plurality of lower electrodes may include a first lower electrode and a second lower electrode on the first lower electrode. The at least one supporter layer may include a first supporter layer in contact with a side surface of an upper region of the first lower electrode. A level of an uppermost end of the second lower electrode may be higher than a level of an upper surface of the first supporter layer.

    CAPACITOR AND MEMORY DEVICE
    5.
    发明公开
    CAPACITOR AND MEMORY DEVICE 审中-公开

    公开(公告)号：US20240315003A1

    公开(公告)日：2024-09-19

    申请号：US18675175

    申请日：2024-05-28

    申请人： Samsung Electronics Co., Ltd.

    发明人： Cheoljin CHO ,  Jaesoon LIM ,  Jaehyoung CHOI ,  Jungmin PARK

    IPC分类号： H10B12/00

    CPC分类号： H10B12/30 ,  H01L28/55 ,  H01L28/65

    摘要： A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.

    METHOD OF FORMING CAPACITOR AND METHOD OF MANUFACTURING DRAM ELEMENT BY USING THE SAME
    6.
    发明公开
    METHOD OF FORMING CAPACITOR AND METHOD OF MANUFACTURING DRAM ELEMENT BY USING THE SAME 审中-公开

    公开(公告)号：US20230363135A1

    公开(公告)日：2023-11-09

    申请号：US18121683

    申请日：2023-03-15

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jimin CHAE ,  Younglim PARK ,  Dongmin SHIN ,  Jaesoon LIM

    IPC分类号： H10B12/00

    CPC分类号： H10B12/033

    摘要： A method of forming a capacitor includes forming lower electrodes including a first metal; forming a support layer pattern, which connects outer side walls of the lower electrodes to each other; forming a first interface layer including a first metal oxide having conductivity on the lower electrodes and the support layer pattern; forming a second interface layer including a second metal oxide having conductivity on the first interface layer; diffusing a second metal included in the second interface layer to a lower electrode surface so as to form a first interface structure including at least the first metal and the second metal on the lower electrode surface; completely removing at least the second interface structure formed on the support layer pattern through an etching process; forming a dielectric layer on the first interface structure and the support layer pattern; and forming an upper electrode on the dielectric layer.

    CAPACITOR AND MEMORY DEVICE
    7.
    发明公开
    CAPACITOR AND MEMORY DEVICE 审中-公开

    公开(公告)号：US20230328958A1

    公开(公告)日：2023-10-12

    申请号：US18205715

    申请日：2023-06-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Cheoljin CHO ,  Jaesoon LIM ,  Jaehyoung CHOI ,  Jungmin PARK

    IPC分类号： H10B12/00

    CPC分类号： H10B12/30 ,  H01L28/65 ,  H01L28/55

    摘要： A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200273747A1

    公开(公告)日：2020-08-27

    申请号：US16711845

    申请日：2019-12-12

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Seung-min RYU ,  Younsoo KIM ,  Gyu-hee PARK ,  Jaesoon LIM ,  Younjoung CHO

    IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

    摘要： A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.