公开(公告)号：US20230163162A1

公开(公告)日：2023-05-25

申请号：US17941688

申请日：2022-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak JEON ,  Jiye BAEK ,  Hanjin LIM

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/91

Abstract: A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.

公开(公告)号：US20230225102A1

公开(公告)日：2023-07-13

申请号：US17964998

申请日：2022-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak JEON ,  Han Jin LIM

IPC: H01L27/108

CPC classification number: H01L27/1085

Abstract: A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.

公开(公告)号：US20230061185A1

公开(公告)日：2023-03-02

申请号：US17708098

申请日：2022-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak JEON ,  Han Jin LIM ,  Hyung Suk JUNG ,  Jae Hyoung CHOI

IPC: H01L27/108

Abstract: A semiconductor device is provided. The semiconductor device comprises a lower electrode, a lower dielectric layer on the lower electrode, an upper electrode on the lower dielectric layer, an upper dielectric layer formed between the lower dielectric layer and the upper electrode, and an interposed electrode film formed between the lower dielectric layer and the upper dielectric layer, wherein the upper dielectric layer includes titanium oxide.

公开(公告)号：US20240162281A1

公开(公告)日：2024-05-16

申请号：US18474072

申请日：2023-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak JEON ,  Jaesoon LIM ,  Hanjin LIM ,  Hyungsuk JUNG

IPC: H10B12/00

CPC classification number: H01L28/90 ,  H10B12/315 ,  H10B12/482 ,  H10B12/488

Abstract: A semiconductor device may include a substrate; a plurality of lower electrodes on the substrate; at least one supporter layer in contact with the plurality of lower electrodes; a dielectric layer on the plurality of lower electrodes and the at least one supporter layer; and an upper electrode on the dielectric layer. Each of the plurality of lower electrodes may include a first lower electrode and a second lower electrode on the first lower electrode. The at least one supporter layer may include a first supporter layer in contact with a side surface of an upper region of the first lower electrode. A level of an uppermost end of the second lower electrode may be higher than a level of an upper surface of the first supporter layer.

公开(公告)号：US20240074150A1

公开(公告)日：2024-02-29

申请号：US18320451

申请日：2023-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Intak JEON ,  Hanjin LIM ,  Hyungsuk JUNG

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H01L28/40 ,  H10B12/033

Abstract: A semiconductor device includes a lower structure; a lower electrode on the lower structure; an upper electrode covering the lower electrode on the lower structure; and a dielectric structure disposed between the lower electrode and the upper electrode. The dielectric structure includes a first dielectric film including a first material and a second dielectric film including a second material different from the first material. The first dielectric film includes a first surface in contact with or facing the lower electrode and a second surface facing the first surface. The second dielectric film includes a first portion disposed in an opening of the first dielectric film and extending in a direction from the second surface toward the first surface.

公开(公告)号：US20240321941A1

公开(公告)日：2024-09-26

申请号：US18581664

申请日：2024-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak JEON ,  Beomjong KIM

IPC: H10B12/00

CPC classification number: H01L28/60 ,  H10B12/30

Abstract: An integrated circuit semiconductor device includes lower electrodes on a substrate, and a support structure supporting the lower electrodes around the lower electrodes. The support structure includes a first support structure supporting lower portions of the lower electrodes, a second support structure apart from the first support structure in a vertical direction perpendicular to the substrate and supporting middle portions of the lower electrodes, and a third support structure apart from the second support structure in the vertical direction perpendicular to the substrate and supporting node portions of the lower electrodes. Each of the first support structure, the second support structure, and the third support structure includes a support pattern and additional holes formed through the support pattern. The support pattern extends in a horizontal direction parallel to the substrate and surrounds the lower electrodes. The support pattern includes holes through which the lower electrodes pass.

公开(公告)号：US20230387191A1

公开(公告)日：2023-11-30

申请号：US18095561

申请日：2023-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Intak JEON ,  Hanjin LIM ,  Hyungsuk JUNG

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/482 ,  H10B12/488 ,  H10B12/315

Abstract: A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, at least one support layer in contact with the plurality of lower electrodes and extending in a direction, parallel to an upper surface of the substrate, an upper electrode disposed on the plurality of lower electrodes and the at least one support layer, a dielectric layer between the plurality of lower electrodes and the upper electrode and between the at least one support layer and the upper electrode, and a blocking layer disposed between the at least one support layer and the dielectric layer, and including a material having a bandgap energy greater than a bandgap energy of a material of the at least one support layer. The dielectric layer is in contact with the plurality of lower electrodes and is spaced apart from the at least one support layer by the blocking layer.