公开(公告)号：US20250169062A1

公开(公告)日：2025-05-22

申请号：US18936133

申请日：2024-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin PARK ,  Jisung KIM ,  Beomjong KIM ,  Hyungsuk JUNG

IPC: H10B12/00 ,  H01L29/51

Abstract: Provided is a semiconductor device including a lower electrode, an upper electrode on the lower electrode, and a dielectric layer structure between the lower electrode and the upper electrode. The dielectric layer structure includes a first dielectric layer in contact with the lower electrode, a second dielectric layer in contact with the first dielectric layer, and a third dielectric layer in contact with the upper electrode. The first dielectric layer, the second dielectric layer, and the third dielectric layer include an anti-ferroelectric material. The anti-ferroelectric material of the first, second, and third dielectric layers are of the same material type, and a silicon dopant is included in a region adjacent to an interface between the first dielectric layer and the lower electrode, and a region adjacent to an interface between the third dielectric layer and the upper electrode.

公开(公告)号：US20230255013A1

公开(公告)日：2023-08-10

申请号：US17878201

申请日：2022-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomjong KIM ,  Hanjin LIM

IPC: H01L27/108 ,  H01L27/08 ,  H01L49/02 ,  H01L21/768

CPC classification number: H01L27/10852 ,  H01L27/0805 ,  H01L27/10894 ,  H01L28/90 ,  H01L21/76897 ,  H01L21/31111

Abstract: A semiconductor device includes first electrodes on a substrate and spaced apart from each other in a horizontal direction substantially parallel to an upper surface of the substrate, first support patterns contacting sidewalls of the first electrodes, a dielectric layer on surfaces of the first electrodes and the first support patterns, and a second electrode on the dielectric layer. The first support patterns are arranged in a first direction substantially parallel to the upper surface of the substrate, the first support patterns contact sidewalls of central portions of the first electrodes in a second direction substantially parallel to the upper surface of the substrate and substantially orthogonal to the first direction, and the first support patterns are not in contact with sidewalls of edge portions of the first electrodes in the second direction.

公开(公告)号：US20240321941A1

公开(公告)日：2024-09-26

申请号：US18581664

申请日：2024-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak JEON ,  Beomjong KIM

IPC: H10B12/00

CPC classification number: H01L28/60 ,  H10B12/30

Abstract: An integrated circuit semiconductor device includes lower electrodes on a substrate, and a support structure supporting the lower electrodes around the lower electrodes. The support structure includes a first support structure supporting lower portions of the lower electrodes, a second support structure apart from the first support structure in a vertical direction perpendicular to the substrate and supporting middle portions of the lower electrodes, and a third support structure apart from the second support structure in the vertical direction perpendicular to the substrate and supporting node portions of the lower electrodes. Each of the first support structure, the second support structure, and the third support structure includes a support pattern and additional holes formed through the support pattern. The support pattern extends in a horizontal direction parallel to the substrate and surrounds the lower electrodes. The support pattern includes holes through which the lower electrodes pass.