公开(公告)号：US20230363135A1

公开(公告)日：2023-11-09

申请号：US18121683

申请日：2023-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jimin CHAE ,  Younglim PARK ,  Dongmin SHIN ,  Jaesoon LIM

IPC: H10B12/00

CPC classification number: H10B12/033

Abstract: A method of forming a capacitor includes forming lower electrodes including a first metal; forming a support layer pattern, which connects outer side walls of the lower electrodes to each other; forming a first interface layer including a first metal oxide having conductivity on the lower electrodes and the support layer pattern; forming a second interface layer including a second metal oxide having conductivity on the first interface layer; diffusing a second metal included in the second interface layer to a lower electrode surface so as to form a first interface structure including at least the first metal and the second metal on the lower electrode surface; completely removing at least the second interface structure formed on the support layer pattern through an etching process; forming a dielectric layer on the first interface structure and the support layer pattern; and forming an upper electrode on the dielectric layer.

公开(公告)号：US20240032276A1

公开(公告)日：2024-01-25

申请号：US18315214

申请日：2023-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jimin CHAE ,  Younglim PARK ,  Dongmin SHIN ,  Wooseop LIM

IPC: H10B12/00 ,  H10B53/30

CPC classification number: H10B12/315 ,  H10B53/30

Abstract: A semiconductor device includes a lower structure; a plurality of lower electrodes on the lower structure; an upper electrode on the plurality of lower electrodes; a dielectric layer between the plurality of lower electrodes and the upper electrode, and including a ferroelectric layer or an antiferroelectric layer; and a plurality of interfacial layers between the plurality of lower electrodes and the dielectric layer, wherein the plurality of interfacial layers include a first layer contacting the plurality of lower electrodes, and including a first metal element, a second metal element, different from the first metal element, and elemental nitrogen; and a second layer between the first layer and the dielectric layer, and including the first metal element, the second metal element, and elemental oxygen, and wherein a concentration of the second metal element in the first layer is lower than a concentration of the second metal element in the second layer.