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公开(公告)号：US20210388010A1
公开(公告)日：2021-12-16
申请号：US17346400
申请日：2021-06-14
发明人： Seungmin RYU , Younsoo KIM , Gyuhee PARK , Younjoung CHO , Yutaro AOKI , Wakana FUSE , Kazuki HARANO , Takanori KOIDE , Yoshiki MANABE , Kazuya SAITO , Hiroyuki UCHIUZOU
IPC分类号： C07F9/00 , H01L51/00 , C23C16/455 , C23C16/34
摘要： An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),
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公开(公告)号：US20190074175A1
公开(公告)日：2019-03-07
申请号：US16183927
申请日：2018-11-08
发明人： Seung-min RYU , Takanori KOIDE , Naoki YAMADA , Jae-soon LIM , Tsubasa SHIRATORI , Youn-joung CHO
IPC分类号： H01L21/02 , H01L49/02 , C23C16/455 , C07F9/00 , C23C16/44 , C23C16/40 , C23C16/34 , C23C16/16
摘要： A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
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公开(公告)号：US20220324887A1
公开(公告)日：2022-10-13
申请号：US17708323
申请日：2022-03-30
发明人： Seungmin RYU , Younsoo KIM , Jaewoon KIM , Kazuki HARANO , Kazuya SAITO , Takanori KOIDE , Yutaro AOKI , Gyuhee PARK , Younjoung CHO , Wakana FUSE , Yoshiki MANABE , Hiroyuki UCHIUZOU , Masayuki KIMURA , Takahiro YOSHII
IPC分类号： C07F9/00 , H01L49/02 , H01L27/108 , C23C16/34 , C23C16/455
摘要： An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):
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4.发明申请公开(公告)号：US20210284667A1
公开(公告)日：2021-09-16
申请号：US17193531
申请日：2021-03-05
发明人： Seungmin RYU , Jaewoon KIM , Gyuhee PARK , Younjoung CHO , Kazuya SAITO , Takanori KOIDE , Yoshiki MANABE , Yutaro AOKI , Hiroyuki UCHIUZOU , Wakana FUSE
IPC分类号： C07F9/141 , C23C16/18 , H01L21/285
摘要： An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.
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公开(公告)号：US20210040130A1
公开(公告)日：2021-02-11
申请号：US16881283
申请日：2020-05-22
发明人： Soyoung LEE , Seungmin RYU , Gyuhee PARK , Jaesoon LIM , Younjoung CHO , Akio SAITO , Wakana FUSE , Yutaro AOKI , Takanori KOIDE
摘要： A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.
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6.发明申请公开(公告)号：US20170178961A1
公开(公告)日：2017-06-22
申请号：US15298275
申请日：2016-10-20
发明人： Seung-min RYU , Takanori KOIDE , Naoki YAMADA , Jae-soon LIM , Tsubasa SHIRATORI , Youn-joung CHO
IPC分类号： H01L21/8234 , H01L27/06 , C23C16/455 , C01B21/06 , C09D5/24 , B05D1/00 , H01L21/02 , H01L27/088
CPC分类号： H01L21/02183 , C07F9/00 , C23C16/16 , C23C16/34 , C23C16/405 , C23C16/4401 , C23C16/4412 , C23C16/45525 , H01L21/0215 , H01L21/0228 , H01L28/00
摘要： A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
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