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1.发明申请公开(公告)号：US20190152996A1
公开(公告)日：2019-05-23
申请号：US16251236
申请日：2019-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee PARK , Youn-soo KIM , Jae-soon LIM , Youn-joung CHO , Kazuki HARANO , Haruyoshi SATO , Tsubasa SHIRATORI , Naoki YAMADA
Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.
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2.发明申请公开(公告)号：US20170178961A1
公开(公告)日：2017-06-22
申请号：US15298275
申请日：2016-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung-min RYU , Takanori KOIDE , Naoki YAMADA , Jae-soon LIM , Tsubasa SHIRATORI , Youn-joung CHO
IPC: H01L21/8234 , H01L27/06 , C23C16/455 , C01B21/06 , C09D5/24 , B05D1/00 , H01L21/02 , H01L27/088
CPC classification number: H01L21/02183 , C07F9/00 , C23C16/16 , C23C16/34 , C23C16/405 , C23C16/4401 , C23C16/4412 , C23C16/45525 , H01L21/0215 , H01L21/0228 , H01L28/00
Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
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公开(公告)号：US20190074175A1
公开(公告)日：2019-03-07
申请号：US16183927
申请日：2018-11-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung-min RYU , Takanori KOIDE , Naoki YAMADA , Jae-soon LIM , Tsubasa SHIRATORI , Youn-joung CHO
Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
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