- 专利标题： ORGANOMETALLIC ADDUCT COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING THE SAME
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申请号： US17193531申请日： 2021-03-05
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公开(公告)号： US20210284667A1公开(公告)日： 2021-09-16
- 发明人: Seungmin RYU , Jaewoon KIM , Gyuhee PARK , Younjoung CHO , Kazuya SAITO , Takanori KOIDE , Yoshiki MANABE , Yutaro AOKI , Hiroyuki UCHIUZOU , Wakana FUSE
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2020-0032285 20200316,KR10-2020-0098822 20200806
- 主分类号： C07F9/141
- IPC分类号： C07F9/141 ; C23C16/18 ; H01L21/285
摘要：
An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.
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