公开(公告)号：US20240067663A1

公开(公告)日：2024-02-29

申请号：US18231339

申请日：2023-08-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Seungmin RYU ,  Gyuhee PARK ,  Younjoung CHO ,  Atsushi YAMASHITA

IPC分类号： C07F5/00 ,  C01F17/218 ,  H01L21/02

CPC分类号： C07F5/003 ,  C01F17/218 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  C23C16/405

摘要： An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):

公开(公告)号：US20230040334A1

公开(公告)日：2023-02-09

申请号：US17859214

申请日：2022-07-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Younsoo KIM ,  Seungmin RYU ,  Atsushi YAMASHITA ,  Gyuhee PARK ,  Younjoung CHO

IPC分类号： C07F17/00 ,  C23C16/40

摘要： An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):