知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

14 records (took 0.024 seconds)

    BEAM TRANSMITTING DEVICE AND OPERATING METHOD OF THE SAME
    1.
    发明申请
    BEAM TRANSMITTING DEVICE AND OPERATING METHOD OF THE SAME 有权

    公开(公告)号：US20210281303A1

    公开(公告)日：2021-09-09

    申请号：US17188135

    申请日：2021-03-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun Sung JEON ,  Wook Bong LEE ,  Min Ki AHN ,  Sung Soo KIM ,  Joon Suk KIM

    IPC: H04B7/06

    Abstract: A beam transmitting device improves performance of a communication channel. The beam transmitting device includes a controller configured to transmit a null data packet (NDP) and receive channel information; and a smoothing circuit configured to smooth a plurality of beamforming vectors in the channel information. The smoothing circuit includes a weight calculator configured to calculate a common phase factor using two adjacent beamforming vectors among the plurality of beamforming vectors, and a moving average filter configured to perform the smoothing using the common phase factor.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200350429A1

    公开(公告)日：2020-11-05

    申请号：US16932076

    申请日：2020-07-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Soo KIM ,  Dong Hyun ROH ,  Koung Min RYU ,  Sang Jin HYUN

    IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423

    Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250113597A1

    公开(公告)日：2025-04-03

    申请号：US18978581

    申请日：2024-12-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Soo KIM ,  Gi Gwan PARK ,  Jung Hun CHOI ,  Koung Min RYU ,  Sun Jung LEE

    IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L27/092 ,  H01L29/423 ,  H01L29/739

    Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20210257250A1

    公开(公告)日：2021-08-19

    申请号：US17308128

    申请日：2021-05-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Soo KIM ,  Chae Ho NA ,  Gyu Hwan AHN ,  Dong Hyun ROH ,  Sang Jin HYUN

    IPC: H01L21/762 ,  H01L27/088 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20170141107A1

    公开(公告)日：2017-05-18

    申请号：US15333545

    申请日：2016-10-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Soo KIM ,  Gi Gwan PARK ,  Jung Hun CHOI ,  Koung Min RYU ,  Sun Jung LEE

    IPC: H01L27/088 ,  H01L29/423 ,  H01L23/528

    Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

    ELECTRONIC DEVICE AND OPERATING METHOD TO COMPENSATE FOR IN-PHASE/QUADRATURE IMBALANCE
    10.
    发明申请
    ELECTRONIC DEVICE AND OPERATING METHOD TO COMPENSATE FOR IN-PHASE/QUADRATURE IMBALANCE 有权

    公开(公告)号：US20250088404A1

    公开(公告)日：2025-03-13

    申请号：US18957074

    申请日：2024-11-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong Han KIM ,  Sung Soo KIM ,  Wan KIM

    IPC: H04L27/38 ,  H03K5/00 ,  H03K5/01

    Abstract: An electronic device includes a feedback oscillator configured to output a first oscillation signal and a second oscillation signal, the second oscillation signal having a defined phase difference from the first oscillation signal, the feedback oscillator including a phase shifter configured to receive the first oscillation signal and output the second oscillation signal, an up-conversion mixer configured to output a first loopback signal obtained by mixing the first oscillation signal with a reference tone signal, and output a second loopback signal obtained by mixing the second oscillation signal with the reference tone signal, and a receiver configured to generate a first reference IQ signal from the first loopback signal, generate a second reference IQ signal from the second loopback signal, and compare an actual phase difference between the first reference IQ signal and the second reference IQ signal with the defined phase difference.

Patent Agency Ranking