公开(公告)号：US20240153948A1

公开(公告)日：2024-05-09

申请号：US18415863

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo KIM ,  Gi Gwan PARK ,  Jung Hun CHOI ,  Koung Min RYU ,  Sun Jung LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5283 ,  H01L29/42364 ,  H01L29/42372 ,  H01L27/0924

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US20190280081A1

公开(公告)日：2019-09-12

申请号：US16424996

申请日：2019-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Hun CHOI ,  Young Tak KIM ,  Da Il EOM ,  Sun Jung LEE

IPC: H01L49/02 ,  H01L27/06 ,  H01L29/78

Abstract: A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.

公开(公告)号：US20250113597A1

公开(公告)日：2025-04-03

申请号：US18978581

申请日：2024-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo KIM ,  Gi Gwan PARK ,  Jung Hun CHOI ,  Koung Min RYU ,  Sun Jung LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L27/092 ,  H01L29/423 ,  H01L29/739

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US20170345884A1

公开(公告)日：2017-11-30

申请号：US15444455

申请日：2017-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Hun CHOI ,  Young Tak KIM ,  Da Il EOM ,  Sun Jung LEE

IPC: H01L49/02 ,  H01L29/78 ,  H01L27/06

CPC classification number: H01L28/20 ,  H01L27/0629 ,  H01L29/7851

Abstract: A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.

公开(公告)号：US20170141107A1

公开(公告)日：2017-05-18

申请号：US15333545

申请日：2016-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo KIM ,  Gi Gwan PARK ,  Jung Hun CHOI ,  Koung Min RYU ,  Sun Jung LEE

IPC: H01L27/088 ,  H01L29/423 ,  H01L23/528

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.