知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

21 records (took 0.017 seconds)

    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200013897A1

    公开(公告)日：2020-01-09

    申请号：US16451787

    申请日：2019-06-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JONG HO PARK ,  Wan Don KIM ,  Weon Hong KIM ,  Hyeon Jun BAEK ,  Byoung Hoon LEE ,  Jeong Hyuk YIM ,  Sang Jin HYUN

    IPC: H01L29/78 ,  H01L27/088 ,  H01L29/51 ,  H01L29/49

    Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack. includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210119058A1

    公开(公告)日：2021-04-22

    申请号：US17114598

    申请日：2020-12-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong Ho PARK ,  Wan Don KIM ,  Weon Hong KIM ,  Hyeon Jun BAEK ,  Byoung Hoon LEE ,  Jeong Hyuk YIM ,  Sang Jin HYUN

    IPC: H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L27/088

    Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220199790A1

    公开(公告)日：2022-06-23

    申请号：US17694759

    申请日：2022-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Heon Bok LEE ,  Dae Yong KIM ,  Wan Don Kim ,  Jeong Hyuk YIM ,  Won Keun CHUNG ,  Hyo Seok CHOI ,  Sang Jin HYUN

    IPC: H01L29/417 ,  H01L29/66 ,  H01L29/08 ,  H01L21/768 ,  H01L29/78

    Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20200075399A1

    公开(公告)日：2020-03-05

    申请号：US16386704

    申请日：2019-04-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Soo KIM ,  Chae Ho NA ,  Gyu Hwan AHN ,  Dong Hyun ROH ,  Sang Jin HYUN

    IPC: H01L21/762 ,  H01L29/66 ,  H01L27/088

    Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190097048A1

    公开(公告)日：2019-03-28

    申请号：US15974775

    申请日：2018-05-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Yeol SONG ,  Su Young BAE ,  Dong Soo LEE ,  Hyung Suk JUNG ,  Sang Jin HYUN

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/423

    Abstract: A semiconductor device including a substrate; a first and second active region on the substrate; a first recess intersecting with the first active region; a second recess intersecting with the second active region; a gate spacer extending along sidewalls of the first and second recess; a first lower high-k dielectric film in the first recess and including a first high-k dielectric material in a first concentration and a second high-k dielectric material; a second lower high-k dielectric film in the second recess and including the first high-k dielectric material in a second concentration that is greater than the first concentration, and the second high-k dielectric material; a first metal-containing film on the first lower high-k dielectric film and including silicon in a third concentration; and a second metal-containing film on the second lower high-k dielectric film and including silicon in a fourth concentration that is smaller than the third concentration.

    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20180261460A1

    公开(公告)日：2018-09-13

    申请号：US15825135

    申请日：2017-11-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yoon Tae HWANG ,  Moon Kyun SONG ,  Nam Gyu CHO ,  Kyu Min LEE ,  Soo Jung CHOI ,  Yong Ho HA ,  Sang Jin HYUN

    IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02

    Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Patent Agency Ranking