公开(公告)号：US20230387118A1

公开(公告)日：2023-11-30

申请号：US18094452

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su Young BAE ,  Jae Yeol SONG ,  Oh Seong KWON ,  Sang Yong KIM

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823857 ,  H01L29/66545 ,  H01L29/66439

Abstract: A semiconductor device includes a substrate, an active pattern disposed on the substrate and extending in a first horizontal direction, a gate spacer disposed along each of sidewalls of a gate trench on the active pattern and extending in a second horizontal direction different from the first horizontal direction, a first gate insulating layer disposed along a sidewall and a bottom surface of the gate trench, a first conductive layer disposed on the first gate insulating layer inside the gate trench, a second gate insulating layer disposed on the first conductive layer inside the gate trench, and including a material different from a material of the first gate insulating layer, a second conductive layer disposed on the second gate insulating layer inside the gate trench, and a third conductive layer disposed on the second conductive layer so as to fill a remaining inner space of the gate trench.

公开(公告)号：US20190097048A1

公开(公告)日：2019-03-28

申请号：US15974775

申请日：2018-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Yeol SONG ,  Su Young BAE ,  Dong Soo LEE ,  Hyung Suk JUNG ,  Sang Jin HYUN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/423

Abstract: A semiconductor device including a substrate; a first and second active region on the substrate; a first recess intersecting with the first active region; a second recess intersecting with the second active region; a gate spacer extending along sidewalls of the first and second recess; a first lower high-k dielectric film in the first recess and including a first high-k dielectric material in a first concentration and a second high-k dielectric material; a second lower high-k dielectric film in the second recess and including the first high-k dielectric material in a second concentration that is greater than the first concentration, and the second high-k dielectric material; a first metal-containing film on the first lower high-k dielectric film and including silicon in a third concentration; and a second metal-containing film on the second lower high-k dielectric film and including silicon in a fourth concentration that is smaller than the third concentration.