公开(公告)号：US20200075399A1

公开(公告)日：2020-03-05

申请号：US16386704

申请日：2019-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo KIM ,  Chae Ho NA ,  Gyu Hwan AHN ,  Dong Hyun ROH ,  Sang Jin HYUN

IPC: H01L21/762 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

公开(公告)号：US20220262673A1

公开(公告)日：2022-08-18

申请号：US17740095

申请日：2022-05-09

Applicant: Samsung Electronics Co., LTD.

Inventor： Chae Ho NA ,  Sung Soo KIM ,  Gyu Hwan AHN ,  Dong Hyun ROH

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/06 ,  H01L27/088

Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.

公开(公告)号：US20220393030A1

公开(公告)日：2022-12-08

申请号：US17667608

申请日：2022-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Ho NA ,  Sung Soo Kim ,  Sun Ki Min ,  Dong Hyun Roh

IPC: H01L29/78 ,  H01L29/417

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

公开(公告)号：US20210257250A1

公开(公告)日：2021-08-19

申请号：US17308128

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo KIM ,  Chae Ho NA ,  Gyu Hwan AHN ,  Dong Hyun ROH ,  Sang Jin HYUN

IPC: H01L21/762 ,  H01L27/088 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.