公开(公告)号：US20200185539A1

公开(公告)日：2020-06-11

申请号：US16793162

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/08

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20150049230A1

公开(公告)日：2015-02-19

申请号：US14451983

申请日：2014-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang Hyun LEE ,  Sun Jung KIM ,  Tae Chan KIM ,  Seok-yong HONG

IPC: H04N5/374

CPC classification number: H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

Abstract: A method of operating an image sensor includes generating a plurality of sub pixel signals using a sub pixel group. The sub pixel group includes a plurality of sub pixels and corresponds to a single pixel. The method further includes generating a pixel signal having a plurality of bits based on a result of comparing the sub pixel signals with a reference voltage. Each of the sub pixels is a 1-transistor (1T) pixel that detects at least one photogenerated charge and includes only one transistor.

Abstract translation: 操作图像传感器的方法包括使用子像素组生成多个子像素信号。 子像素组包括多个子像素并且对应于单个像素。 该方法还包括基于将子像素信号与参考电压进行比较的结果来生成具有多个位的像素信号。 每个子像素是检测至少一个光生电荷并且仅包括一个晶体管的1-晶体管（1T）像素。

公开(公告)号：US20210234050A1

公开(公告)日：2021-07-29

申请号：US17231120

申请日：2021-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/08 ,  H01L27/092

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20190288121A1

公开(公告)日：2019-09-19

申请号：US16435263

申请日：2019-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/775 ,  H01L21/8238 ,  B82Y10/00 ,  H01L27/092

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20170345945A1

公开(公告)日：2017-11-30

申请号：US15373065

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20180130886A1

公开(公告)日：2018-05-10

申请号：US15685255

申请日：2017-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum KIM ,  Gyeom KIM ,  Seok Hoon KIM ,  Tae Jin PARK ,  Jeong Ho YOO ,  Cho Eun LEE ,  Hyun Jung LEE ,  Sun Jung KIM ,  Dong Suk SHIN

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/51 ,  H01L29/423 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L29/41725 ,  H01L21/02425 ,  H01L21/32053 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/42356 ,  H01L29/517 ,  H01L2924/0002

Abstract: A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.

公开(公告)号：US20230317860A1

公开(公告)日：2023-10-05

申请号：US18207274

申请日：2023-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/08 ,  H01L27/092

CPC classification number: H01L29/78696 ,  H01L29/0673 ,  H01L29/42392 ,  H01L21/02603 ,  H01L21/02532 ,  H01L21/823807 ,  H01L29/66545 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/42364 ,  H01L29/66439 ,  H01L29/0653 ,  H01L29/0847 ,  H01L27/092 ,  H01L29/66742 ,  H01L29/78684 ,  H01L29/78651 ,  Y10S977/762 ,  H01L29/068 ,  Y10S977/938 ,  Y10S977/765

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20250120129A1

公开(公告)日：2025-04-10

申请号：US18985356

申请日：2024-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H10D30/00 ,  H10D30/01 ,  H10D30/43 ,  H10D30/67 ,  H10D62/10 ,  H10D64/01

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20180138269A1

公开(公告)日：2018-05-17

申请号：US15715832

申请日：2017-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok Hoon KIM ,  Hyun Jung LEE ,  Kyung Hee KIM ,  Sun Jung KIM ,  Jin Bum KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Cho Eun LEE ,  Dong Suk SHIN

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/0257 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain region. The semiconductor device includes a first gate electrode and a second gate electrode spaced apart from each other on a fin-type pattern, a recess formed in the fin-type pattern between the first gate electrode and the second gate electrode, and a semiconductor pattern including a lower semiconductor film formed along a profile of the recess and an upper semiconductor film on the lower semiconductor film, wherein the lower semiconductor film includes a lower epitaxial layer and an upper epitaxial layer sequentially formed on the fin-type pattern, and a carbon concentration of the upper epitaxial layer is greater than a carbon concentration of the lower epitaxial layer.

公开(公告)号：US20180096845A1

公开(公告)日：2018-04-05

申请号：US15595945

申请日：2017-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho Eun LEE ,  Jin Bum KIM ,  Kang Hun MOON ,  Jae Myung CHOE ,  Sun Jung KIM ,  Dong Suk SHIN ,  IL GYOU SHIN ,  Jeong Ho YOO

IPC: H01L21/02 ,  H01L21/223 ,  H01L29/66

CPC classification number: H01L21/02661 ,  H01L21/02071 ,  H01L21/223 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.