公开(公告)号：US20180138269A1

公开(公告)日：2018-05-17

申请号：US15715832

申请日：2017-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok Hoon KIM ,  Hyun Jung LEE ,  Kyung Hee KIM ,  Sun Jung KIM ,  Jin Bum KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Cho Eun LEE ,  Dong Suk SHIN

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/0257 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain region. The semiconductor device includes a first gate electrode and a second gate electrode spaced apart from each other on a fin-type pattern, a recess formed in the fin-type pattern between the first gate electrode and the second gate electrode, and a semiconductor pattern including a lower semiconductor film formed along a profile of the recess and an upper semiconductor film on the lower semiconductor film, wherein the lower semiconductor film includes a lower epitaxial layer and an upper epitaxial layer sequentially formed on the fin-type pattern, and a carbon concentration of the upper epitaxial layer is greater than a carbon concentration of the lower epitaxial layer.