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公开(公告)号:US12272396B2
公开(公告)日:2025-04-08
申请号:US18449066
申请日:2023-08-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junyoung Park , Younghoon Son , Hyunyoon Cho , Youngdon Choi , Junghwan Choi
IPC: G11C11/4093 , G06F13/16 , G11C7/10 , G11C7/22 , G11C11/4076 , G11C11/4096 , G11C29/12 , G11C29/18 , G11C29/42 , H03K5/1534 , H04L25/02 , H04L25/03 , H04L25/06 , H04L25/49
Abstract: In a method of generating a multi-level signal having one of three or more voltage levels that are different from one another, input data including two or more bits is received. A drive strength of at least one of two or more driving paths is changed based on the two or more bits such that a first transition time, during which an output data signal is transitioned from a first voltage level to a second voltage level, is changed. The output data signal that is the multi-level signal is generated such that the first transition time of the output data signal is changed and a second transition time, during which the output data signal is transitioned from the first voltage level to a third voltage level different from the second voltage level, is maintained.
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公开(公告)号:US12235672B2
公开(公告)日:2025-02-25
申请号:US18363906
申请日:2023-08-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junyoung Maeng , Jaewoo Park , Myoungbo Kwak , Junghwan Choi
IPC: G06F1/10
Abstract: An apparatus and method for timing skew calibration. For example, the apparatus may include an analog-to-digital conversion circuit configured to sample an input signal based on a clock signal and convert the sampled input signal into a digital code, a skew detection circuit configured to calculate a first sum of standard deviations for respective levels of the digital code, compare the first sum of the standard deviations with a previously calculated second sum of standard deviations, and select a smaller value from among the first sum and the second sum, and a compensation circuit configured to compensate for a skew of the clock signal based on the selected one of the first sum and the second sum.
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公开(公告)号:US20240395298A1
公开(公告)日:2024-11-28
申请号:US18794825
申请日:2024-08-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Baek Jin Lim , Youngchul Cho , Seungjin Park , Doobock Lee , Youngdon Choi , Junghwan Choi
Abstract: A semiconductor device according to an embodiment includes a plurality of sampler circuits configured to receive a plurality of offset clock signals or a plurality of divided clock signals and to sample a data signal in response to each of a plurality of divided clock signals. A calibration circuit applies a first offset clock signal to a first sampler circuit, applies a second offset clock signal having an opposite phase to the first offset clock signal to a second sampler circuit, and generates a first offset adjustment signal for adjusting an offset of the first sampler circuit based on an output of the first sampler circuit that is output in response to the first offset clock signal.
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公开(公告)号:US20240241802A1
公开(公告)日:2024-07-18
申请号:US18383350
申请日:2023-10-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junyoung Park , Joohwan Kim , Jindo Byun , Eunseok Shin , Hyunyoon Cho , Junghwan Choi
CPC classification number: G06F11/1604 , G06F1/10 , G06F2201/805
Abstract: The memory device includes a clock receiver receiving an external clock signal, a transmitter receiving first to Nth data in parallel and sequentially outputting the first to Nth data based on first to Nth clock signals including different phases, and a QEC circuit correcting a skew between the first to Nth clock signals, wherein the external clock signal includes a same frequency as the first to Nth clock signals, and the QEC circuit selectively receives the first clock signal among the first to Nth clock signals, generates the second clock signal including a phase different from a phase of the first clock signal based on a delay operation with respect to the first clock signal, and corrects the skew between the first to Nth clock signals by performing a phase comparison between the first to Nth clock signals generated based on the first and second clock signals.
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公开(公告)号:US20240202067A1
公开(公告)日:2024-06-20
申请号:US18223124
申请日:2023-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seonghyeog CHOI , Changkyu Seol , Dong Kim , Inhoon Park , Jinsoo Lim , Youngdon Choi , Junghwan Choi
IPC: G06F11/10
CPC classification number: G06F11/10
Abstract: A method of operating a storage device includes: periodically performing a patrol read operation on a memory device; storing failure information according to the patrol read operation in a buffer memory; generating an uncorrectable error as a result of a first error correction operation performed on read data of the memory device; loading the failure information from the buffer memory; and performing a second error correction operation on the read data by using the failure information.
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公开(公告)号:US11940830B2
公开(公告)日:2024-03-26
申请号:US17709853
申请日:2022-03-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinook Jung , Jaewoo Park , Junhan Choi , Myoungbo Kwak , Junghwan Choi
IPC: G11C11/4074 , G05F1/575 , G11C11/4076 , G11C11/4093
CPC classification number: G05F1/575 , G11C11/4074 , G11C11/4076 , G11C11/4093
Abstract: Disclosed is a low dropout regulator which includes a first resistor, a first transistor including a gate terminal connected with a first end of the first resistor, a source terminal connected with a power supply voltage terminal, and a drain terminal connected with a first node, an operational amplifier including input terminals respectively connected with a reference voltage and the first node and an output terminal, a second transistor including a gate terminal connected with the output terminal of the operational amplifier, a source terminal connected with the first node, and a drain terminal connected with a second node, a third transistor including a gate terminal connected with a second end of the first resistor, a source terminal connected with the power supply voltage terminal, and a drain terminal connected with a third node, and a current source connected between the second node and a ground voltage terminal.
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公开(公告)号:US11888486B2
公开(公告)日:2024-01-30
申请号:US17872527
申请日:2022-07-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinook Jung , Jaewoo Park , Myoungbo Kwak , Junghwan Choi
CPC classification number: H03K5/01 , H03H11/16 , H03K2005/00019
Abstract: A phase correcting circuit includes a delay circuit that receives an input clock signal and delays the input clock signal as much as a first delay time to output an output clock signal to a 0-th node, a first fine tuning circuit, and a second fine tuning circuit. The first fine tuning circuit includes a first terminal connected with the 0-th node, a second terminal receiving a first control signal, and a third terminal, and the second fine tuning circuit includes a fourth terminal connected with the third terminal, a fifth terminal receiving a second control signal, and a sixth terminal connected with a load capacitor. In response to the first control signal, the output clock signal may be further delayed as much as a second delay time shorter than the first delay time. In response to the second control signal, the output clock signal may be advanced as much as a third delay time shorter than the first delay time.
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公开(公告)号:US20230409496A1
公开(公告)日:2023-12-21
申请号:US18242034
申请日:2023-09-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungmin JIN , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
CPC classification number: G06F13/1668 , H04L25/4917
Abstract: A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.
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公开(公告)号:US20230253018A1
公开(公告)日:2023-08-10
申请号:US18134618
申请日:2023-04-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junyoung Park , Jaewoo Park , Younghoon Son , Youngdon Choi , Junghwan Choi
CPC classification number: G11C5/147 , G11C7/1063 , G11C7/1069 , G11C7/109 , G11C7/1096 , G11C11/565 , H04L25/028 , H04L25/4917 , G11C2207/101
Abstract: A method of generating a multi-level signal having one of three or more voltage levels that are different from each other, the method including: performing a first voltage setting operation in which first and second voltage intervals are adjusted to be different from each other, wherein the first voltage interval represents a difference between a first pair of adjacent voltage levels and the second voltage interval represents a difference between a second pair of adjacent voltage levels; performing a second voltage setting operation in which a voltage swing width is adjusted, the voltage swing width representing a difference between a lowest and a highest voltage level among the three or more voltage levels; and generating an output data signal that is the multi-level signal based on input data including two or more bits, a result of the first voltage setting operation and a result of the second voltage setting operation.
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公开(公告)号:US11687114B2
公开(公告)日:2023-06-27
申请号:US17145211
申请日:2021-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junyoung Park , Young-Hoon Son , Hyun-Yoon Cho , Youngdon Choi , Junghwan Choi
IPC: G06F1/06 , G11C11/406 , G11C11/403 , G06F13/40
CPC classification number: G06F1/06 , G06F13/4022 , G11C11/403 , G11C11/40607
Abstract: Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.
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