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公开(公告)号:US20250014958A1
公开(公告)日:2025-01-09
申请号:US18892965
申请日:2024-09-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeonggi Jin , Jumyong Park , Jinho An , Taehwa Jeong , Jinho Chun , Juil Choi , Atsushi Fujisaki
IPC: H01L23/31 , H01L23/29 , H01L23/522
Abstract: A semiconductor package includes: a lower package including a lower semiconductor chip, a molding layer on a side surface of the lower semiconductor chip, a conductive post in the molding layer and having a concave top surface, a lower redistribution pattern electrically connecting the lower semiconductor chip to the conductive post, and an upper redistribution electrically connected the conductive post; and an upper package on the lower package, the upper package including an upper semiconductor chip. A first portion of an inner wall of the molding layer contacts a sidewall of the conductive post, and a second portion of the inner wall of the molding layer extends vertically above the top surface of the conductive post, wherein the first and second portions of the inner wall of the molding layer are vertically coplanar with each other and with the sidewall of the conductive post.
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公开(公告)号:US12021034B2
公开(公告)日:2024-06-25
申请号:US17198359
申请日:2021-03-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Solji Song , Byeongchan Kim , Jumyong Park , Jinho An , Chungsun Lee , Jeonggi Jin , Juil Choi
IPC: H01L23/538 , H01L23/00 , H01L25/065
CPC classification number: H01L23/5386 , H01L23/5383 , H01L24/16 , H01L25/0655 , H01L2224/16227
Abstract: A semiconductor package includes an interposer having a first surface and a second surface opposite to the first surface and including a plurality of bonding pads, and first and second semiconductor devices on the interposer. Each of the plurality of bonding pads includes a first pad pattern provided to be exposed from the first surface and having a first width and a second pad pattern provided on the first pad pattern and having a second width greater than the first width.
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公开(公告)号:US20210035878A1
公开(公告)日:2021-02-04
申请号:US16829227
申请日:2020-03-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeonggi Jin , Jumyong Park , Jinho An , Taehwa Jeong , Jinho Chun , Juil Choi , Atsushi Fujisaki
IPC: H01L23/31 , H01L23/29 , H01L23/522
Abstract: A semiconductor package includes a semiconductor chip including a chip pad; a lower redistribution structure on the semiconductor chip, the lower redistribution structure including a lower redistribution insulating layer and a lower redistribution pattern electrically connected to the chip pad of the semiconductor chip; a molding layer on at least a portion of the semiconductor chip; and a conductive post in the molding layer, the conductive post having a bottom surface and a top surface, the bottom surface of the conductive post being in contact with the lower redistribution pattern of the lower redistribution structure and the top surface of the conductive post having a concave shape.
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公开(公告)号:US09799619B2
公开(公告)日:2017-10-24
申请号:US15209298
申请日:2016-07-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeonggi Jin , Kyu-Ha Lee , Jinho Chun , Byunglyul Park , Jinho An
CPC classification number: H01L24/09 , H01L21/4857 , H01L21/78 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/525 , H01L24/05 , H01L24/08 , H01L25/117 , H01L25/50 , H01L2224/0231 , H01L2224/0233 , H01L2224/02351 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/06181 , H01L2224/08059 , H01L2224/08111 , H01L2224/13022 , H01L2224/17181 , H01L2225/0652 , H01L2225/06541
Abstract: An electronic device includes an upper insulating layer on a substrate. An upper redistribution structure is embedded in the upper insulating layer. The upper redistribution structure includes an upper contact portion, an upper pad portion, and an upper line portion between the upper contact portion and the upper pad portion. A passivation layer is on the upper insulating layer and the upper redistribution structure. An upper opening is configured to pass through the passivation layer and expose the upper pad portion. Vertical thicknesses of the upper pad portion and the upper contact portion are greater than a vertical thickness of the upper line portion.
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公开(公告)号:US12142541B2
公开(公告)日:2024-11-12
申请号:US16829227
申请日:2020-03-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeonggi Jin , Jumyong Park , Jinho An , Taehwa Jeong , Jinho Chun , Juil Choi , Atsushi Fujisaki
IPC: H01L23/31 , H01L23/29 , H01L23/522
Abstract: A semiconductor package includes a semiconductor chip including a chip pad; a lower redistribution structure on the semiconductor chip, the lower redistribution structure including a lower redistribution insulating layer and a lower redistribution pattern electrically connected to the chip pad of the semiconductor chip; a molding layer on at least a portion of the semiconductor chip; and a conductive post in the molding layer, the conductive post having a bottom surface and a top surface, the bottom surface of the conductive post being in contact with the lower redistribution pattern of the lower redistribution structure and the top surface of the conductive post having a concave shape.
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公开(公告)号:US11476176B2
公开(公告)日:2022-10-18
申请号:US17035145
申请日:2020-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jumyong Park , Solji Song , Jinho An , Jeonggi Jin , Jinho Chun , Juil Choi
IPC: H01L29/40 , H01L23/31 , H01L23/48 , H01L23/00 , H01L21/768 , H01L21/321 , H01L23/29 , H01L21/3105
Abstract: A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.
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公开(公告)号:US11978688B2
公开(公告)日:2024-05-07
申请号:US17966864
申请日:2022-10-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jumyong Park , Solji Song , Jinho An , Jeonggi Jin , Jinho Chun , Juil Choi
IPC: H01L29/40 , H01L21/768 , H01L23/00 , H01L23/31 , H01L23/48 , H01L21/3105 , H01L21/321 , H01L23/29
CPC classification number: H01L23/3192 , H01L21/76898 , H01L23/3171 , H01L23/481 , H01L24/05 , H01L21/31053 , H01L21/3212 , H01L23/293 , H01L2224/05025 , H01L2224/05073 , H01L2224/0557 , H01L2224/05573
Abstract: A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.
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8.
公开(公告)号:US09806004B2
公开(公告)日:2017-10-31
申请号:US14953857
申请日:2015-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ho-Jin Lee , Byunglyul Park , Jisoon Park , Jinho An
IPC: H01L23/48 , H01L23/00 , H01L23/522 , H01L21/768
CPC classification number: H01L23/481 , H01L21/76898 , H01L23/5226 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/92 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/03614 , H01L2224/03845 , H01L2224/039 , H01L2224/0401 , H01L2224/05016 , H01L2224/05018 , H01L2224/05019 , H01L2224/05025 , H01L2224/05026 , H01L2224/05027 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05559 , H01L2224/05564 , H01L2224/0557 , H01L2224/05571 , H01L2224/05572 , H01L2224/05644 , H01L2224/0601 , H01L2224/06051 , H01L2224/06181 , H01L2224/16146 , H01L2224/92 , H01L2924/13091 , H01L2924/381 , H01L2924/00012 , H01L2924/04941 , H01L2924/04953 , H01L2924/01028 , H01L2924/01074 , H01L2924/00014 , H01L2224/03444 , H01L2224/0346 , H01L2224/03 , H01L21/304
Abstract: Semiconductor devices are provided. The semiconductor devices include a substrate, a first interlayer insulating layer disposed on a front-side of the substrate, a TSV structure passing through the first interlayer insulating layer and the substrate. The TSV structure has a bottom end protruding from a back-side of the substrate, a back-side insulating layer and a back-side passivation layer disposed on the back-side of the substrate, and a bumping pad buried in the back-side insulating layer and the back-side passivation layer and disposed on the bottom end of the TSV structure. The bottom end of the TSV structure protrudes into the back-side bumping pad, and top surfaces of the back-side passivation layer and the back-side bumping pad are coplanar.
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公开(公告)号:US20170053882A1
公开(公告)日:2017-02-23
申请号:US15209298
申请日:2016-07-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeonggi Jin , Kyu-Ha Lee , Jinho Chun , Byunglyul Park , Jinho An
CPC classification number: H01L24/09 , H01L21/4857 , H01L21/78 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/525 , H01L24/05 , H01L24/08 , H01L25/117 , H01L25/50 , H01L2224/0231 , H01L2224/0233 , H01L2224/02351 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/06181 , H01L2224/08059 , H01L2224/08111 , H01L2224/13022 , H01L2224/17181 , H01L2225/0652 , H01L2225/06541
Abstract: An electronic device includes an upper insulating layer on a substrate. An upper redistribution structure is embedded in the upper insulating layer. The upper redistribution structure includes an upper contact portion, an upper pad portion, and an upper line portion between the upper contact portion and the upper pad portion. A passivation layer is on the upper insulating layer and the upper redistribution structure. An upper opening is configured to pass through the passivation layer and expose the upper pad portion. Vertical thicknesses of the upper pad portion and the upper contact portion are greater than a vertical thickness of the upper line portion.
Abstract translation: 电子器件包括在衬底上的上绝缘层。 上部再分配结构嵌入在上绝缘层中。 上再分配结构包括上接触部分,上焊盘部分和上接触部分和上焊盘部分之间的上线部分。 钝化层位于上绝缘层和上再分布结构上。 上开口构造成穿过钝化层并暴露上焊盘部分。 上部焊盘部分和上部接触部分的垂直厚度大于上部分部分的垂直厚度。
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