Abstract:
An address latch includes a first address processing unit and a second address processing unit. The first address processing unit latches an external address signals to output first latched signals through an output node based on a read command and a write command. The second address processing unit latches the external address signals based on the read command with a burst length set to a first value and outputs second latched signals through the output node based on an internal read command.
Abstract:
The semiconductor package includes an upper semiconductor chip stacked on a package substrate and a support layer or a lower semiconductor chip disposed between the upper semiconductor chip and the package substrate. The upper semiconductor chip includes a protrusion downwardly extending from an edge thereof. The protrusion of the upper semiconductor chip is combined with a sidewall of the support layer or the lower semiconductor chip. Related methods are also provided.
Abstract:
Methods of forming an interconnection line pattern using a screen printing technique. The method includes preparing a substrate having unevenness, aligning a stencil mask on the substrate, and printing a paste including materials for forming the interconnection line pattern on a convex portion of the unevenness formed on the substrate.
Abstract:
A memory device includes an auto error check scrub (ECS) control circuit configured to generate an auto ECS command for performing an ECS operation based on a refresh control signal. The memory device also includes a burst ECS control circuit configured to generate an internal burst ECS command for performing the ECS operation every set period based on a burst ECS command and an ECS end flag. The memory device further includes an ECS address generation circuit configured to generate an ECS address for the ECS operation by counting an input of the auto ECS command or the internal burst ECS command and to generate the ECS end flag based on a value of the ECS address.
Abstract:
A semiconductor system includes a controller configured to count the number of error check scrub (ECS) operations and configured to generate ECS information that includes information with regard to an address at which the ECS operation is to be performed based on the number of ECS operations. The semiconductor system further includes a memory apparatus configured to perform the ECS operation on a region that is selected by the ECS information.
Abstract:
An address control circuit includes an address timing control circuit configured to latch address signals inputted from outside the address timing control circuit, sequentially store the latched signals at predetermined timings, and output the stored signals as a bank group address. The address control circuit also includes an address multiplexing circuit configured to generate bank group select signals according to the bank group address. The address multiplexing circuit is configured to generate the bank group select signals having a second value according to the bank group address having a first value when a preset memory access mode is a first memory access mode, and generate the bank group select signals having the second value according to the bank group address having a third value different from the first value when the preset memory access mode is a second memory access mode.
Abstract:
A semiconductor memory device may include a core circuit including a plurality of memory cell arrays electrically connected between a plurality of row lines and a plurality of column lines, and a column path control circuit configured to generate a preliminary column pulse from a command signal irrelevant to a column address signal, to generate a main column pulse in response to an enable time point of the column address signal and an enable time point of the preliminary column pulse, and to enable an access target column line among the plurality of column lines.
Abstract:
A stack package includes a cover film, a first package having a first semiconductor chip which is attached to the cover film, a first adhesive member which is formed to seal the first semiconductor chip and a surface of the cover film, and a first circuit pattern which is disposed over the first adhesive member and electrically connected with the first semiconductor chip; a second package disposed over the first package, having a second semiconductor chip which is electrically connected with the first circuit pattern, a second adhesive member which is formed to seal the second semiconductor chip, and a second circuit pattern which is formed over the second adhesive member, and a via formed to pass through the second circuit pattern and the second adhesive member and to be electrically connected with the first circuit pattern and the second circuit pattern.
Abstract:
A stacked semiconductor package includes a semiconductor package module including a plurality of semiconductor packages each of which has a first surface, a second surface facing away from the first surface, side surfaces connecting the first surface and the second surface and through-holes formed on the side surfaces to pass through the first surface and the second surface and which are stacked such that their through-holes vertically connect with one another, and adhesive members which are formed between the semiconductor packages and attach the semiconductor packages to one another, a main substrate supporting the semiconductor package module and formed, on a third surface thereof facing the semiconductor package module, with main connection pads which are aligned with the through-holes, and conductive connection members formed in the through-holes and electrically connecting the semiconductor packages with the main connection pads.
Abstract:
A photoresist composition contains: a polymer comprising a first compound and a second compound; a photoacid generator; and a solvent. The first compound has a unit structure, which includes: hydrogen or an alkyl group; and at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group. The second compound has a unit structure, which includes at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group.