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公开(公告)号：US11712760B2
公开(公告)日：2023-08-01
申请号：US17793866
申请日：2021-03-19
Applicant: SENJU METAL INDUSTRY CO., LTD.
Inventor： Naoto Kameda , Masato Tsuchiya , Katsuji Nakamura , Osamu Munekata , Kaichi Tsuruta
IPC: B23K35/02 , B23K35/26 , B32B15/01 , H01L23/367 , H01L23/00 , B23K101/40
CPC classification number: B23K35/0238 , B23K35/262 , B32B15/01 , H01L23/3672 , H01L24/29 , H01L24/32 , B23K2101/40 , B32B2307/732 , H01L2224/2908 , H01L2224/2918 , H01L2224/29111 , H01L2224/29147 , H01L2224/29155 , H01L2224/29184 , H01L2224/32225
Abstract: In a layered bonding material 10, a coefficient of linear expansion of a base material 11 is 5.5 to 15.5 ppm/K and a first surface and a second surface of the base material 11 are coated with pieces of lead-free solder 12a and 12b.
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公开(公告)号：US20160254103A1
公开(公告)日：2016-09-01
申请号：US15151088
申请日：2016-05-10
Applicant: SENJU METAL INDUSTRY CO., LTD.
Inventor： Katsuji Nakamura , Kaichi Tsuruta , Yuji Ozaki , Shigeaki Watarai , Hidenori Takagi , Yutaka Ohori
IPC: H01G11/50 , H01M2/26 , C25D3/22 , C25D3/30 , C25D3/56 , H01G11/30 , C25D3/12 , C23C18/16 , C23C18/31 , C23C18/32 , C23C18/48 , H01G11/06 , C25D5/12 , C25D3/60
CPC classification number: H01G11/50 , C23C18/1651 , C23C18/1653 , C23C18/1827 , C23C18/31 , C23C18/32 , C23C18/36 , C23C18/48 , C23C18/52 , C23C18/54 , C25D3/12 , C25D3/22 , C25D3/30 , C25D3/565 , C25D3/60 , C25D5/12 , C25D5/44 , H01B1/023 , H01B13/32 , H01G11/06 , H01G11/24 , H01G11/30 , H01G11/66 , H01M2/202 , H01M2/26 , H01M2/30 , H01M2004/028 , Y02E60/13 , Y10T29/49147
Abstract: An electrode for an energy storage device including a Zn layer or Zn alloy layer, a Ni layer, and a Sn layer or Sn alloy layer formed by plating on a connecting terminal part of a positive electrode composed of Al so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop. Accordingly, this electrode can be soldered to a Cu negative electrode, which is composed of metal that is different species from Al, through a Sn layer or a Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. The contacting area is increased in comparison with the conventional jointing by spot-welding or conventional fastening by a bolt so that the resistance value at the contacting point is reduced.
Abstract translation: 1.一种蓄电装置用电极，其特征在于，包括Zn层或Zn合金层，Ni层以及通过电镀在由Al构成的正极的连接端子部分上形成的Sn层或Sn合金层， 接触点减小，并且可以有效地提供能量存储装置的电压而没有任何下落。 因此，该电极可以通过Sn层或Sn合金层焊接到由与Al不同的金属构成的Cu负极上，使得Al正极和Cu负极的接合强度可以 增强。 与通过点焊的常规接合或通过螺栓的常规紧固相比，接触面积增加，使得接触点处的电阻值降低。
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公开(公告)号：US20230094946A1
公开(公告)日：2023-03-30
申请号：US17800714
申请日：2020-12-28
Applicant: Senju Metal Industry Co., Ltd.
Inventor： Hiroyuki Iwamoto , Osamu Munekata , Kaichi Tsuruta , Katsuji Nakamura , Shigeki Kondoh , Masato Tsuchiya
Abstract: Provided are a metal body that can be manufactured easily while whisker generation resulting from external stress is suppressed, a fitting connection terminal, and a method for forming the metal body. The metal body includes a barrier layer containing Ni as a main component formed on a metal substrate containing Cu as a main component, and a metal plating layer containing Sn as a main component formed directly on the barrier layer. An area ratio that is a ratio of the area of an intermetallic compound containing Sn and Cu in the metal plating layer to a cross section of the metal plating layer is 20% or less in the cross section of the metal body.
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公开(公告)号：US10121606B2
公开(公告)日：2018-11-06
申请号：US15151088
申请日：2016-05-10
Applicant: SENJU METAL INDUSTRY CO., LTD.
Inventor： Katsuji Nakamura , Kaichi Tsuruta , Yuji Ozaki , Shigeaki Watarai , Hidenori Takagi , Yutaka Ohori
IPC: H01R9/00 , H05K3/00 , H01G11/50 , C23C18/16 , C23C18/18 , C23C18/54 , H01G11/24 , H01G11/66 , H01M2/20 , H01M2/30 , H01B1/02 , H01B13/32 , C25D5/12 , C25D5/44 , C23C18/31 , C23C18/32 , C23C18/48 , C25D3/12 , C25D3/22 , C25D3/30 , C25D3/56 , C25D3/60 , H01G11/06 , H01G11/30 , H01M2/26 , C23C18/36 , C23C18/52 , H01M4/02
Abstract: An electrode for an energy storage device including a Zn layer or Zn alloy layer, a Ni layer, and a Sn layer or Sn alloy layer formed by plating on a connecting terminal part of a positive electrode composed of Al so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop. Accordingly, this electrode can be soldered to a Cu negative electrode, which is composed of metal that is different species from Al, through a Sn layer or a Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. The contacting area is increased in comparison with the conventional jointing by spot-welding or conventional fastening by a bolt so that the resistance value at the contacting point is reduced.
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