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公开(公告)号：US10811386B2
公开(公告)日：2020-10-20
申请号：US15704996
申请日：2017-09-14
发明人： Chin Tien Chiu , Hem Takiar , Gursharan Singh , Fisher Yu , C C Liao
IPC分类号： H01L25/065 , H01L23/00 , H01L25/00 , H01L23/31
摘要： The present technology relates to a semiconductor device. The semiconductor device comprises: a plurality of dies stacked on top of each other, each of the dies comprising a first major surface, an IO conductive pattern on the first major surface and extended to a minor surface substantially perpendicular to the major surfaces to form at least one IO electrical contact on the minor surface, and the plurality of dies aligned so that the corresponding minor surfaces of all dies substantially coplanar with respect to each other to form a common flat sidewall, and a plurality of IO routing traces formed over the sidewall and at least partially spaced away from the sidewall. The plurality of IO routing traces are spaced apart from each other in a first direction on the sidewall, and each of IO routing traces is electrically connected to a respective IO electrical contact and extended across the sidewall in a second direction substantially perpendicular to the first direction on the sidewall.
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公开(公告)号：US20180114773A1
公开(公告)日：2018-04-26
申请号：US15704984
申请日：2017-09-14
发明人： Chin Tien Chiu , Tiger Tai , Ken Qian , CC Liao , Hem Takiar , Gursharan Singh
IPC分类号： H01L25/065 , H01L25/00
CPC分类号： H01L25/0652 , H01L24/05 , H01L24/16 , H01L24/24 , H01L24/25 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/82 , H01L25/50 , H01L2224/02371 , H01L2224/02377 , H01L2224/0401 , H01L2224/05548 , H01L2224/13144 , H01L2224/13147 , H01L2224/14131 , H01L2224/16137 , H01L2224/16145 , H01L2224/24051 , H01L2224/24105 , H01L2224/24147 , H01L2224/244 , H01L2224/245 , H01L2224/2512 , H01L2224/25175 , H01L2224/2518 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73207 , H01L2224/73209 , H01L2224/73227 , H01L2224/73253 , H01L2224/73257 , H01L2224/73267 , H01L2224/82051 , H01L2224/82106 , H01L2224/82948 , H01L2225/06506 , H01L2225/06513 , H01L2225/06551 , H01L2225/06555 , H01L2924/01079 , H01L2924/01029 , H01L2924/01013 , H01L2924/00012 , H01L2924/00014
摘要： The present technology relates to a semiconductor package. The semiconductor package comprises: a first component comprising a plurality of first dies stacked on top of each other, each of first dies comprising at least one side surface and an electrical contact exposed on the side surface, and the plurality of first dies aligned so that the corresponding side surfaces of all first dies substantially coplanar with respect to each other to form a common sidewall; a first conductive pattern formed over the sidewall and at least partially spaced away from the sidewall, the first conductive pattern electrically interconnecting the electrical contacts of the plurality of first dies; at least one second component; and a second conductive pattern formed on a surface of the second component, the second conductive pattern affixed and electrically connected to the first conductive pattern formed over the sidewall of the first component.
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公开(公告)号：US20180019228A1
公开(公告)日：2018-01-18
申请号：US15619895
申请日：2017-06-12
发明人： Cong Zhang , Fuqiang Xiao , Bin Xu , Haijun Wu , Chin Tien Chiu , Zengyu Zhou
IPC分类号： H01L25/065 , H01L23/00
CPC分类号： H01L25/0657 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L24/14 , H01L24/49 , H01L25/043 , H01L25/0652 , H01L25/071 , H01L25/074 , H01L25/0756 , H01L25/112 , H01L25/117 , H01L25/50 , H01L2224/1401 , H01L2224/49107 , H01L2225/06506 , H01L2225/06517 , H01L2225/06527 , H01L2225/06562 , H01L2924/1438 , H01L2924/15172 , H01L2924/181
摘要： A semiconductor package is disclosed including a number of stacked semiconductor die, electrically connected to each other with wire bonds. The stacked semiconductor die are provided in a mold compound such that a spacing exists between a top die in the die stack and a surface of the mold compound. The wire bonds to the top die may be provided in the spacing. An RDL pad is affixed to the surface of the mold compound. Columns of bumps may be formed on the die bond pads of the top die in the die stack to electrically couple the RDL pad to the die stack across the spacing.
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公开(公告)号：US20170309608A1
公开(公告)日：2017-10-26
申请号：US15394986
申请日：2016-12-30
申请人： SanDisk Information Technology (Shanghai) Co., Ltd , SanDisk Semiconductor (Shanghai) Co., Ltd.
发明人： Shiv Kumar , Chin Tien Chiu , Honny Chen
IPC分类号： H01L25/00 , H01L21/768 , H01L25/065 , H01L23/31 , H01L23/528 , H01L23/522 , H01L23/00
CPC分类号： H01L25/50 , H01L21/76802 , H01L21/76879 , H01L21/76898 , H01L23/3114 , H01L23/5226 , H01L23/528 , H01L24/08 , H01L24/32 , H01L25/0657 , H01L2225/06544 , H01L2225/06565 , H01L2225/06582
摘要： A semiconductor device and a fabricating method of semiconductor device are disclosed. The semiconductor device comprises: a substrate having a bonding pad on a surface of the substrate; at least two semiconductor components each having a first surface and a second surface opposite the first surface, the semiconductor components stacked on top of each other on the surface of the substrate via a layer of component attach material attached on the second surface of the respective semiconductor component; an integral through via hole extending completely through the semiconductor components and the layers of component attach material and having a substantially uniform diameter along an extending direction of the integral through via hole aligned with the bonding pad on the surface of the substrate, and a continuous conductive material filled in the integral through via hole and in physical and electrical contact with the bonding pad of the substrate.
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公开(公告)号：US11031371B2
公开(公告)日：2021-06-08
申请号：US15704984
申请日：2017-09-14
发明人： Chin Tien Chiu , Tiger Tai , Ken Qian , C C Liao , Hem Takiar , Gursharan Singh
IPC分类号： H01L25/065 , H01L23/00 , H01L25/18 , H01L25/00
摘要： The present technology relates to a semiconductor package. The semiconductor package comprises: a first component comprising a plurality of first dies stacked on top of each other, each of first dies comprising at least one side surface and an electrical contact exposed on the side surface, and the plurality of first dies aligned so that the corresponding side surfaces of all first dies substantially coplanar with respect to each other to form a common sidewall; a first conductive pattern formed over the sidewall and at least partially spaced away from the sidewall, the first conductive pattern electrically interconnecting the electrical contacts of the plurality of first dies; at least one second component; and a second conductive pattern formed on a surface of the second component, the second conductive pattern affixed and electrically connected to the first conductive pattern formed over the sidewall of the first component.
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公开(公告)号：US20190189591A1
公开(公告)日：2019-06-20
申请号：US15907491
申请日：2018-02-28
发明人： Yazhou Zhang , Chin Tien Chiu , Cong Zhang
IPC分类号： H01L25/065 , H01L23/00 , H01L23/528
CPC分类号： H01L25/0657 , H01L23/528 , H01L24/05 , H01L24/14 , H01L24/46 , H01L2224/04042 , H01L2224/14133 , H01L2224/4918 , H01L2225/06506 , H01L2225/06565
摘要： A semiconductor cube is disclosed including one or more highly planar vertical sidewalls on which to form a pattern of electrical traces. The semiconductor cube may be fabricated from a semiconductor cube assembly including a vertical semiconductor die stack and a pair of wire bond landing blocks. The vertical semiconductor die stack may be wire bonded off of first and second opposed edges to different levels of the first and second wire bond landing blocks. Once all wire bonds are formed, the semiconductor cube assembly may be encapsulated in mold compound. The mold compound may then be cut to separate the semiconductor die stack from the wire bond landing blocks, leaving the wire bonds exposed in a sidewall of the semiconductor cube.
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7.发明申请METHODS FOR FORMING COLOR IMAGES ON MEMORY DEVICES AND MEMORY DEVICES FORMED THEREBY 审中-公开在存储器件和形成的存储器件上形成彩色图像的方法公开(公告)号：US20160086827A1
公开(公告)日：2016-03-24
申请号：US14959859
申请日：2015-12-04
发明人： Peng Fu , Zhong Lu , Chin Tien Chiu , Cheeman Yu , Matthew Chen , Weiting Jiang
IPC分类号： H01L21/56 , H01L23/544
CPC分类号： H01L21/565 , H01L21/56 , H01L21/561 , H01L21/566 , H01L23/28 , H01L23/544 , H01L23/552 , H01L24/73 , H01L24/97 , H01L2223/54406 , H01L2223/5442 , H01L2223/54433 , H01L2223/54486 , H01L2224/16225 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2924/1431 , H01L2924/1434 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3025 , H01L2224/81 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A memory device including graphical content and a method of making the memory device with graphical content are disclosed. The graphical content is formed on a release media. The release media and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the graphical content is transferred from the release media to the encapsulated memory device.
摘要翻译： 公开了一种包括图形内容的存储设备和使具有图形内容的存储设备的方法。 图形内容形成在释放介质上。 将释放介质和未封装的存储器件放置在模具中并封装。 在模塑料的包封和固化期间，图形内容从释放介质转移到封装的存储器件。
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公开(公告)号：US10177119B2
公开(公告)日：2019-01-08
申请号：US15619895
申请日：2017-06-12
发明人： Cong Zhang , Fuqiang Xiao , Bin Xu , Haijun Wu , Chin Tien Chiu , Zengyu Zhou
IPC分类号： H01L25/04 , H01L25/07 , H01L25/11 , H01L25/065 , H01L23/00 , H01L21/683 , H01L25/00 , H01L25/075 , H01L23/31 , H01L21/56
摘要： A semiconductor package is disclosed including a number of stacked semiconductor die, electrically connected to each other with wire bonds. The stacked semiconductor die are provided in a mold compound such that a spacing exists between a top die in the die stack and a surface of the mold compound. The wire bonds to the top die may be provided in the spacing. An RDL pad is affixed to the surface of the mold compound. Columns of bumps may be formed on the die bond pads of the top die in the die stack to electrically couple the RDL pad to the die stack across the spacing.
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公开(公告)号：US20180114777A1
公开(公告)日：2018-04-26
申请号：US15704996
申请日：2017-09-14
发明人： Chin Tien Chiu , Hem Takiar , Gursharan Singh , Fisher Yu , CC Liao
IPC分类号： H01L25/065 , H01L23/31
摘要： The present technology relates to a semiconductor device. The semiconductor device comprises: a plurality of dies stacked on top of each other, each of the dies comprising a first major surface, an IO conductive pattern on the first major surface and extended to a minor surface substantially perpendicular to the major surfaces to form at least one IO electrical contact on the minor surface, and the plurality of dies aligned so that the corresponding minor surfaces of all dies substantially coplanar with respect to each other to form a common flat sidewall, and a plurality of IO routing traces formed over the sidewall and at least partially spaced away from the sidewall. The plurality of IO routing traces are spaced apart from each other in a first direction on the sidewall, and each of IO routing traces is electrically connected to a respective IO electrical contact and extended across the sidewall in a second direction substantially perpendicular to the first direction on the sidewall.
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公开(公告)号：US09362244B2
公开(公告)日：2016-06-07
申请号：US14375408
申请日：2012-10-22
发明人： Chin Tien Chiu , Cheeman Yu , Hem Takiar
IPC分类号： H01L23/48 , H01L23/00 , H01L21/56 , H01L21/82 , H01L23/31 , H01L25/065 , H01L25/00 , H01L23/14 , H01L23/495 , H01L23/538
CPC分类号： H01L24/06 , H01L21/561 , H01L21/82 , H01L23/145 , H01L23/3121 , H01L23/49575 , H01L23/5386 , H01L24/03 , H01L24/24 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/03011 , H01L2224/04042 , H01L2224/05554 , H01L2224/24145 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/78301 , H01L2224/85001 , H01L2224/85947 , H01L2224/85986 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06527 , H01L2225/06551 , H01L2225/06562 , H01L2225/06565 , H01L2924/00014 , H01L2924/12042 , H01L2924/1431 , H01L2924/1434 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/00 , H01L2224/48247 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2224/45099 , H01L2224/05599
摘要： A memory device, and a method of making the memory device, are disclosed. The memory device is fabricated by mounting one or more semiconductor die on a substrate, and wire bonding the die to the substrate. The die and wire bonds are encapsuated, and the encapsulated device is singulated. The wire bonds are severed during the singulation step, and thereafter the severed wire bonds are connected to the substrate by external connectors on one or more surfaces of the molding compound.
摘要翻译： 公开了一种存储器件及其制造方法。 存储器件通过将一个或多个半导体管芯安装在衬底上并将管芯接合到衬底来制造。 管芯和引线键合被封装，并且封装的器件被分割。 在分割步骤期间，线接合被切断，此后，切断的线接合通过模塑料的一个或多个表面上的外部连接器连接到基底。
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