摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side of the die, a dielectric material on a first side and on a second side of the mold compound; and interconnect structures coupled to the C4 pads and to the TSV pads. Embodiments further include forming packaging structures wherein multiple dies are fully embedded within a BBUL package without PoP lands.
摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side of the die, a dielectric material on a first side and on a second side of the mold compound; and interconnect structures coupled to the C4 pads and to the TSV pads. Embodiments further include forming packaging structures wherein multiple dies are fully embedded within a BBUL package without PoP lands.
摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side of the die, a dielectric material on a first side and on a second side of the mold compound; and interconnect structures coupled to the C4 pads and to the TSV pads. Embodiments further include forming packaging structures wherein multiple dies are fully embedded within a BBUL package without PoP lands.
摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side of the die, a dielectric material on a first side and on a second side of the mold compound; and interconnect structures coupled to the C4 pads and to the TSV pads. Embodiments further include forming packaging structures wherein multiple dies are fully embedded within a BBUL package without PoP lands.
摘要:
The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein a first microelectronic device having through-silicon vias may be stacked with a second microelectronic device and used in a bumpless build-up layer package.
摘要:
A packaged semiconductor die with a bumpless die-package interface and methods of fabrication are described. For example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines, one of which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. In another example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines with a layer of conductive vias disposed thereon. At least one of the conductive lines is coupled directly to a conductive via of the semiconductor die which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate.
摘要:
The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein an interposer, such as a through-silicon via interposer, may be used in a bumpless build-up layer package to facilitate stacked microelectronic components.
摘要:
In some embodiments, a retractable ledge socket is presented. In this regard, a socket ledge is introduced to receive a processor, and to reposition to allow the processor to contact socket connections. Other embodiments are also disclosed and claimed.
摘要:
An IC package, an electronic assembly, and methods of preventing warpage of components of an electronic assembly during fabrication of the electronic assembly are shown. An IC package including an adhesive disposed at or near at least one of four corners of a die of the IC package is shown. An electronic assembly including an IC package that includes an adhesive disposed at or near at least one of four corners of a second surface of a first substrate is shown. Methods of preventing warpage of components of an electronic assembly during fabrication of the electronic assembly that include applying an adhesive to at least one of four corners of a first surface of a first component are shown.
摘要:
In some embodiments, a retractable ledge socket is presented. In this regard, a socket ledge is introduced to receive a processor, and to reposition to allow the processor to contact socket connections. Other embodiments are also disclosed and claimed.