SUBSTRATE AND METHOD OF FORMING THE SAME
    2.
    发明申请
    SUBSTRATE AND METHOD OF FORMING THE SAME 审中-公开
    基板及其形成方法

    公开(公告)号:US20150206812A1

    公开(公告)日:2015-07-23

    申请号:US14263823

    申请日:2014-04-28

    Abstract: Methods and apparatus for cavity formation in a semiconductor package substrate are provided. In one embodiment, a method for producing at least one cavity within a semiconductor package substrate includes etching the semiconductor package substrate from a surface of the semiconductor package substrate at least one intended cavity location in order to obtain at least one cavity. The method includes depositing a copper portion on a substrate in a cavity location. Next, the method includes masking the substrate while keeping the copper portion exposed. Lastly, the method includes etching the substrate to form a cavity by etching away the copper portion. The structure formed includes a cavity that extends partially through the substrate without damaging a glass fabric embedded in the substrate.

    Abstract translation: 提供了半导体封装基板中的空腔形成方法和装置。 在一个实施例中,一种用于在半导体封装衬底内产生至少一个空腔的方法包括从半导体封装衬底的表面至少一个预定的腔位置蚀刻半导体封装衬底,以便获得至少一个空腔。 该方法包括在空腔位置的基板上沉积铜部分。 接下来,该方法包括在保持铜部分暴露的同时掩蔽基板。 最后,该方法包括通过蚀刻掉铜部分来蚀刻基板以形成空腔。 所形成的结构包括部分地延伸穿过基底的空腔,而不会损害嵌入在基底中的玻璃织物。

Patent Agency Ranking