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公开(公告)号:US11626218B2
公开(公告)日:2023-04-11
申请号:US17354895
申请日:2021-06-22
Inventor: Masateru Mikami , Daisuke Suetsugu , Norimichi Noguchi
Abstract: The laminated alumina board for an electronic device includes an alumina board that is made of a sintered body of alumina particles and has an unevenness structure that is formed of the alumina particles on a surface and a flattening film that is provided on an upper surface of the alumina board and contains alumina as a main component.
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公开(公告)号:US11504931B2
公开(公告)日:2022-11-22
申请号:US16831490
申请日:2020-03-26
Inventor: Yoshiki Shimata , Yoshinori Shishida , Daisuke Suetsugu , Kazuto Fukuda , Toshiya Hiramatsu , Motoi Hatanaka
Abstract: A powder supplier, which supplies a powder material to a pressure molding mechanism that continuously generates a molded body, including: a casing having an inlet to which the powder material is supplied and an outlet from which the powder material is discharged; one or a plurality of screws being disposed inside the casing and rotationally driven to transport the powder material in an axial direction; motors being disposed outside the casing and rotationally driving screws; and a regulator being disposed between the screws, and the outlet inside the casing, and regulating a flow of the powder material. The regulator has a rotation shaft perpendicular to the axial direction of the screws, and a width direction of the powder material discharged from the outlet, and being configured to rotate about the rotation shaft.
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公开(公告)号:US11765824B2
公开(公告)日:2023-09-19
申请号:US17357159
申请日:2021-06-24
Inventor: Norimichi Noguchi , Masateru Mikami , Kenji Toyoshima , Hiroki Oda , Daisuke Suetsugu , Tatsuya Urakawa
IPC: H05K1/03 , H01C1/14 , H01C7/18 , H01C17/00 , H05K1/16 , C04B35/624 , C04B35/44 , B32B18/00 , C04B35/08 , C04B35/584 , C04B35/581 , C04B35/04
CPC classification number: H05K1/0306 , B32B18/00 , C04B35/44 , C04B35/624 , H01C1/14 , H01C7/18 , H01C17/006 , H05K1/167 , C04B35/04 , C04B35/08 , C04B35/581 , C04B35/584
Abstract: A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.
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公开(公告)号:US11692958B2
公开(公告)日:2023-07-04
申请号:US17354925
申请日:2021-06-22
Inventor: Shinya Suzuki , Kiyokazu Itoi , Daisuke Suetsugu , Norimichi Noguchi , Nobutoshi Takagi
CPC classification number: G01N27/125 , G01N33/005
Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.
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公开(公告)号:US11280027B2
公开(公告)日:2022-03-22
申请号:US16637553
申请日:2018-11-21
Inventor: Takahide Hirasaki , Daisuke Suetsugu , Takafumi Okuma
IPC: C30B25/06 , C30B29/38 , C30B29/42 , C30B29/44 , C30B29/20 , C23C14/06 , C30B29/22 , C30B25/18 , C23C14/34 , C30B29/36
Abstract: A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.
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公开(公告)号:US11094515B2
公开(公告)日:2021-08-17
申请号:US15834036
申请日:2017-12-06
Inventor: Daisuke Suetsugu , Masaaki Tanabe , Akira Okuda , Yosimasa Takii
Abstract: A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.
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公开(公告)号:US11021788B2
公开(公告)日:2021-06-01
申请号:US16205166
申请日:2018-11-29
Inventor: Takafumi Okuma , Daisuke Suetsugu , Takahide Hirasaki
IPC: C23C14/00 , C23C14/06 , C23C14/34 , H01L21/02 , H01L21/3205
Abstract: A sputtering method of forming a thin film by allowing a target material to react with a gas includes narrowing down film deposition conditions from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.
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公开(公告)号:US10252339B2
公开(公告)日:2019-04-09
申请号:US15251840
申请日:2016-08-30
Inventor: Hisao Nagai , Takeshi Koiwasaki , Daisuke Suetsugu , Takafumi Okuma
IPC: B22F9/16 , B01J19/08 , C01B21/068 , C01B33/021 , C01B33/18 , C01F7/02 , B22F9/14 , C01B32/956
Abstract: To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.
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