Powder supplier
    2.
    发明授权

    公开(公告)号:US11504931B2

    公开(公告)日:2022-11-22

    申请号:US16831490

    申请日:2020-03-26

    Abstract: A powder supplier, which supplies a powder material to a pressure molding mechanism that continuously generates a molded body, including: a casing having an inlet to which the powder material is supplied and an outlet from which the powder material is discharged; one or a plurality of screws being disposed inside the casing and rotationally driven to transport the powder material in an axial direction; motors being disposed outside the casing and rotationally driving screws; and a regulator being disposed between the screws, and the outlet inside the casing, and regulating a flow of the powder material. The regulator has a rotation shaft perpendicular to the axial direction of the screws, and a width direction of the powder material discharged from the outlet, and being configured to rotate about the rotation shaft.

    Gas sensor device
    4.
    发明授权

    公开(公告)号:US11692958B2

    公开(公告)日:2023-07-04

    申请号:US17354925

    申请日:2021-06-22

    CPC classification number: G01N27/125 G01N33/005

    Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

    Sputtering apparatus and sputtering method

    公开(公告)号:US11094515B2

    公开(公告)日:2021-08-17

    申请号:US15834036

    申请日:2017-12-06

    Abstract: A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

    Fine particle production apparatus and fine particle production method

    公开(公告)号:US10252339B2

    公开(公告)日:2019-04-09

    申请号:US15251840

    申请日:2016-08-30

    Abstract: To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.

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