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公开(公告)号:US11692958B2
公开(公告)日:2023-07-04
申请号:US17354925
申请日:2021-06-22
Inventor: Shinya Suzuki , Kiyokazu Itoi , Daisuke Suetsugu , Norimichi Noguchi , Nobutoshi Takagi
CPC classification number: G01N27/125 , G01N33/005
Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.