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公开(公告)号:US11810927B2
公开(公告)日:2023-11-07
申请号:US17171917
申请日:2021-02-09
Inventor: Kiyokazu Itoi , Daisuke Sakurai
IPC: H01L27/146 , G01L1/18
CPC classification number: H01L27/14603 , G01L1/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14645
Abstract: A semiconductor element includes a plurality of microlenses provided on a main surface to collect light, a plurality of conductive electrodes provided on a back surface of the main surface, a photoelectric converter to which the light collected by the plurality of microlenses is guided, and a strain sensor provided on the same layer as the photoelectric converter to detect a strain. A solid-state imaging apparatus includes the semiconductor element, a transparent member, an adhesive layer that covers the plurality of microlenses and adheres to the transparent member, and a plurality of external connection electrodes electrically connected to the plurality of conductive electrodes, respectively.
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公开(公告)号:US11381767B2
公开(公告)日:2022-07-05
申请号:US16803551
申请日:2020-02-27
Inventor: Kiyokazu Itoi , Takeru Tamari , Daisuke Sakurai , Shozo Ochi
Abstract: A solid-state imaging device includes a solid-state imaging element and a substrate fixed to the solid-state imaging element by a sealing resin on a surface on an opposite side of a light receiving surface of the solid-state imaging element, an outer edge of the substrate seen from the light receiving surface side of the solid-state imaging element is positioned within an outer edge of the solid-state imaging element and an outer edge of the sealing resin seen from the light receiving surface side of the solid-state imaging element is positioned within the outer edge of the solid-state imaging element. The sealing resin includes a first sealing resin and a second sealing resin not contacting the first sealing resin to seal the components.
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公开(公告)号:US11692958B2
公开(公告)日:2023-07-04
申请号:US17354925
申请日:2021-06-22
Inventor: Shinya Suzuki , Kiyokazu Itoi , Daisuke Suetsugu , Norimichi Noguchi , Nobutoshi Takagi
CPC classification number: G01N27/125 , G01N33/005
Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.
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公开(公告)号:US11908785B2
公开(公告)日:2024-02-20
申请号:US17238286
申请日:2021-04-23
Inventor: Takeru Tamari , Daisuke Sakurai , Kiyokazu Itoi
IPC: H01L23/498 , G01B7/16 , H01L21/48 , H01L23/48
CPC classification number: H01L23/49833 , G01B7/20 , H01L21/486 , H01L21/4857 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49838
Abstract: A semiconductor device includes: a first board that has a first end surface and a second end surface opposite to the first end surface; a second board that is attached to the second end surface of the first board; a plurality of first electrodes that are provided on the first end surface; a second electrode that is provided on the second end surface and electrically coupled to an electrode of the second board; an internal wiring that is provided inside the first board and electrically coupled to the second electrode; a plurality of third electrodes that are provided inside the first board and electrically couple the first electrodes to the internal wiring; and a strain sensor that is provided inside the first board and measures a strain generated in the first board, in which a linear expansion coefficient of each of the third electrodes is larger than a linear expansion coefficient of the first board.
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