Method for manufacturing semiconductor device

    公开(公告)号:US10790250B2

    公开(公告)日:2020-09-29

    申请号:US16211611

    申请日:2018-12-06

    Abstract: A method for manufacturing a semiconductor device includes: supplying a resist to a first surface of a semiconductor element having a plurality of electrode pads to cover the electrode pad surfaces; opening the resist on the electrode pad surfaces to expose the electrode pad surfaces from the resist; curing the resist by applying light or heat to the resist; forming bump electrodes on the electrode pad surfaces by filling a plating solution into the openings of the resist; and peeling the resist from the first surface of the semiconductor element.

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