公开(公告)号：US11795575B2

公开(公告)日：2023-10-24

申请号：US18046946

申请日：2022-10-17

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48 ,  C30B25/02 ,  H01L31/18

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/3556 ,  H01L21/024 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02293 ,  H01L21/02387 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02658 ,  H01L31/1828 ,  G02F1/3558

摘要： A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

公开(公告)号：US11761115B2

公开(公告)日：2023-09-19

申请号：US17937787

申请日：2022-10-04

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48 ,  C30B25/02 ,  H01L31/18

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/3556 ,  H01L21/024 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02293 ,  H01L21/02387 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02658 ,  H01L31/1828 ,  G02F1/3558

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US20230042736A1

公开(公告)日：2023-02-09

申请号：US17937827

申请日：2022-10-04

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  C30B29/44 ,  H01L21/02 ,  G02F1/355 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US20190164753A1

公开(公告)日：2019-05-30

申请号：US15924775

申请日：2018-03-19

申请人： Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.O.C

发明人： Wen-Hsiang Huang ,  Chih-Hung Wu ,  Hwen-Fen Hong

IPC分类号： H01L21/02 ,  C30B29/44 ,  C30B29/68 ,  C30B25/10

摘要： The present invention provides a method for fabricating an InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD). The method comprises: placing a silicon substrate in a reaction chamber; arranging the reaction chamber to have a first chamber temperature, and growing a first GaP layer with a first thickness on the Si substrate at the first chamber temperature; arranging the reaction chamber to have a second chamber temperature, and growing a second GaP layer with a second thickness on the first GaP layer at the second chamber temperature; arranging the reaction chamber to have a third chamber temperature for a first time interval, and then arranging the reaction chamber to have a fourth chamber temperature for a second time interval; and growing a multi-layered InGaP layer on the second GaP layer.

公开(公告)号：US09777402B2

公开(公告)日：2017-10-03

申请号：US15455370

申请日：2017-03-10

申请人： The United States of America, as represented by the Secretary of the Air Force

发明人： Vladimir L. Tassev ,  Rita D. Peterson

IPC分类号： H01L31/0352 ,  C30B25/04 ,  G02F1/355 ,  C30B25/18 ,  C30B29/44 ,  C30B29/42 ,  G02F1/39

CPC分类号： C30B25/04 ,  C30B25/18 ,  C30B29/42 ,  C30B29/44 ,  G02F1/3556 ,  G02F1/3558 ,  G02F1/39 ,  G02F2001/392 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02543 ,  H01L21/02609 ,  H01L21/0262 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/109 ,  H01L31/1844

摘要： A method of forming a layered OP material is provided, where the layered OP material comprises an OPGaAs template, and a layer of GaP on the OPGaAs template. The OPGaAs template comprises a patterned layer of GaAs having alternating features of inverted crystallographic polarity of GaAs. The patterned layer of GaAs comprises a first feature comprising a first crystallographic polarity form of GaAs having a first dimension, and a second feature comprising a second crystallographic polarity form of GaAs having a second dimension. The layer of GaP on the patterned layer of GaAs comprises alternating regions of inverted crystallographic polarity that generally correspond to their underlying first and second features of the patterned layer of GaAs. Additionally, each of the alternating regions of inverted crystallographic polarity of GaP are present at about 100 micron thickness or more.

公开(公告)号：US20090283761A1

公开(公告)日：2009-11-19

申请号：US12271245

申请日：2008-11-14

申请人： Ralf HAMMER ,  Manfred Jurisch

发明人： Ralf HAMMER ,  Manfred Jurisch

IPC分类号： H01L29/24 ,  C30B29/42 ,  C30B29/44 ,  C30B29/06 ,  C30B29/40 ,  C30B29/00 ,  C30B29/36 ,  C30B29/20 ,  C30B29/38 ,  B32B3/10 ,  B32B9/00 ,  B32B15/20 ,  H01L29/20 ,  H01L29/26 ,  H01L29/161 ,  H01L29/04 ,  B28D5/00 ,  B26F3/00

CPC分类号： H01L21/78 ,  B28D5/00 ,  B28D5/0064 ,  Y10S117/915 ,  Y10T225/12 ,  Y10T428/24802 ,  Y10T428/31678

摘要： A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane (2′) relative to the cleavage device, setting a tensional intensity (K) by means of tensional fields (3′, 4′), determining an energy release rate G(α) in dependence from a possible deflection angle (α) from the cleavage plane (2′) upon crack propagation, controlling the tensional fields (3′, 4′) such that the crack further propagates in the single crystal, wherein G(0)≧2γe(0) and simultaneously at least one of the following conditions is satisfied:  ∂ G ∂ α  α = 0 ≤ 2  β e h   if   ∂ 2  G ∂ α 2 ≤ 0   or ( 2.1 )  ∂ G ∂ α  ≤ 2  β e h  ∀ α  :  α 1

摘要翻译： 提出了分离单晶，特别是其部分的平板的方法，其可以包括：相对于切割装置预调整晶体解理面（2'），通过张力场设定张力强度（K） （3'，4'），根据裂纹扩展时从解理平面（2'）的可能偏转角（α）确定能量释放速率G（α），控制张力场（3'，4'） 使得裂纹在单晶中进一步传播，其中G（0）> = 2gammae（0），同时满足以下条件中的至少一个：∂∂∂∂∂α= 0 2ββ （2.1）∂∂∂∂

公开(公告)号：US5603761A

公开(公告)日：1997-02-18

申请号：US510861

申请日：1995-08-03

申请人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuji Yoshida ,  Masahiko Saito

发明人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuji Yoshida ,  Masahiko Saito

IPC分类号： C30B19/00 ,  C30B19/06 ,  C30B29/44 ,  C30B35/00 ,  H01L21/208

CPC分类号： C30B19/064 ,  Y10T117/10 ,  Y10T117/1024

摘要： In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least one second vent hole and at least two sub-chambers separated by a partition plate and communicated with each other via a communicating portion; and before the substrates and the solution for liquid phase growth are brought into contact with each other, the deposition chamber and the solution chamber are revolved for causing the solution for liquid phase growth to move through the communicating portion so as to increase and decrease the volume of space portions of the respective sub-chambers and thereby replacement of a heat-treatment gas in the deposition chamber and the solution chamber is undertaken to achieve heat treatment. With this heat-treatment, surface oxide films on the substrates and the solution are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities.

摘要翻译： 在改进的液相外延生长方法和装置中，其中多个基板被放置在具有至少一个第一通气孔的沉积室中; 用于液相生长的溶液被保持在具有至少一个第二通气孔的溶液室中，并且至少两个分隔开的隔板通过连通部分彼此连通; 在基板和液相生长用溶液彼此接触之前，使沉积室和溶液室旋转，使液相生长溶液移动通过连通部，从而增大和减小体积 的各个副室的空间部分，由此更换沉积室和溶液室中的热处理气体以实现热处理。 通过这种热处理，去除了基板上的表面氧化膜和溶液，从而可以获得具有优良品质的液相外延层。

公开(公告)号：US5500390A

公开(公告)日：1996-03-19

申请号：US457184

申请日：1995-06-01

申请人： Munehisa Yanagisawa ,  Yuki Tamura ,  Norihide Kokubu

发明人： Munehisa Yanagisawa ,  Yuki Tamura ,  Norihide Kokubu

IPC分类号： G01N21/64 ,  C30B19/04 ,  C30B19/10 ,  C30B29/44 ,  H01L21/208 ,  H01L33/30

CPC分类号： C30B19/04 ,  C30B29/44

摘要： A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution, which comprise the steps of: measuring the Si concentrations of the GaP single crystal layers in preceding runs; then determining the additional Si amounts to be added into the Ga solution to refresh the Si effective concentration therein in reference to the Si concentrations in the layers; and adding Si of the thus determined amount into the Ga solution to commence the subsequent run, wherein the Si concentration in each of the GaP liquid phase epitaxial growth layers is determined from measurement of the O/G ratio in the layer, which is computed from each pair of the both values of the photoluminescent spectral peak intensity around the wavelength of 6300 .ANG. (O component) as the numerator and the other photoluminescent spectral peak intensity around the wavelength of 5540 .ANG. (G component) as the denominator in the photoluminescence spectrum obtained by illuminating the GaP liquid phase epitaxial growth layer with a laser beam at room temperature, with the help of good correlation therebetween.

摘要翻译： 一种用于控制在一系列GaP液相外延生长中生长的GaP单晶层中的Si浓度的方法，其重复使用一种相同的Ga溶液，其包括以下步骤：测量GaP的Si浓度 上一次运行中的单晶层; 然后根据层中的Si浓度确定添加到Ga溶液中的额外Si量以刷新其中的Si有效浓度; 并将如此确定的量的Si添加到Ga溶液中以开始随后的运行，其中每个GaP液相外延生长层中的Si浓度通过从层中的O / G比的测量确定，其从 作为分子的波长为6300附近（O分量）的光致发光光谱峰强度的两个值和作为光致发光光谱中的分母的5540 ANGSTROM（G成分）周围的其他光致发光光谱峰值强度的每一对 通过在室温下用激光束照射GaP液相外延生长层，借助于它们之间的良好相关性。

公开(公告)号：US11603603B2

公开(公告)日：2023-03-14

申请号：US17661052

申请日：2022-04-28

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48 ,  C30B25/02 ,  H01L31/18

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US20230045019A1

公开(公告)日：2023-02-09

申请号：US17937791

申请日：2022-10-04

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  C30B29/44 ,  H01L21/02 ,  G02F1/355 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.