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1.发明授权
公开(公告)号：US5500390A
公开(公告)日：1996-03-19
申请号：US457184
申请日：1995-06-01
摘要： A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution, which comprise the steps of: measuring the Si concentrations of the GaP single crystal layers in preceding runs; then determining the additional Si amounts to be added into the Ga solution to refresh the Si effective concentration therein in reference to the Si concentrations in the layers; and adding Si of the thus determined amount into the Ga solution to commence the subsequent run, wherein the Si concentration in each of the GaP liquid phase epitaxial growth layers is determined from measurement of the O/G ratio in the layer, which is computed from each pair of the both values of the photoluminescent spectral peak intensity around the wavelength of 6300 .ANG. (O component) as the numerator and the other photoluminescent spectral peak intensity around the wavelength of 5540 .ANG. (G component) as the denominator in the photoluminescence spectrum obtained by illuminating the GaP liquid phase epitaxial growth layer with a laser beam at room temperature, with the help of good correlation therebetween.
摘要翻译： 一种用于控制在一系列GaP液相外延生长中生长的GaP单晶层中的Si浓度的方法，其重复使用一种相同的Ga溶液，其包括以下步骤：测量GaP的Si浓度 上一次运行中的单晶层; 然后根据层中的Si浓度确定添加到Ga溶液中的额外Si量以刷新其中的Si有效浓度; 并将如此确定的量的Si添加到Ga溶液中以开始随后的运行，其中每个GaP液相外延生长层中的Si浓度通过从层中的O / G比的测量确定，其从 作为分子的波长为6300附近（O分量）的光致发光光谱峰强度的两个值和作为光致发光光谱中的分母的5540 ANGSTROM（G成分）周围的其他光致发光光谱峰值强度的每一对 通过在室温下用激光束照射GaP液相外延生长层，借助于它们之间的良好相关性。
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公开(公告)号：US5300792A
公开(公告)日：1994-04-05
申请号：US960330
申请日：1992-10-13
申请人： Munehisa Yanagisawa , Susumu Arisaka , Yuki Tamura , Toshio Otaki
发明人： Munehisa Yanagisawa , Susumu Arisaka , Yuki Tamura , Toshio Otaki
IPC分类号： H01L21/208 , H01L33/30 , H01L33/00
CPC分类号： H01L33/305 , H01L33/0062
摘要： A GaP red light emitting diode (LED) which is free from a problem of luminance reduction comprises an n-type GaP epitaxial layer grown on an n-type GaP substrate, and a p-type GaP epitaxial layer grown on the n-type Gap epitaxial layer, wherein the n-type epitaxial layer has an Si concentration of not more than 5.times.10.sup.17 atoms/cc and an S concentration of not more than 1.times.10.sup.18 atoms/cc.
摘要翻译： 没有亮度降低问题的GaP红色发光二极管（LED）包括在n型GaP衬底上生长的n型GaP外延层和在n型间隙上生长的p型GaP外延层 外延层，其中所述n型外延层的Si浓度不大于5×10 17原子/ cc，S浓度不大于1×1018原子/ cc。
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公开(公告)号：US5636023A
公开(公告)日：1997-06-03
申请号：US498407
申请日：1995-07-05
申请人： Munehisa Yanagisawa
发明人： Munehisa Yanagisawa
IPC分类号： G01B11/24 , G01B11/30 , G01N21/88 , G01N21/93 , G01N21/956
CPC分类号： G01B11/30
摘要： An apparatus of measuring a surface shape, which enables the surface shape of a sample to be accurately and quantitatively measured by a simple procedure, is provided. A sample 1 is placed on a sample stage 3, a light is projected by an optical system 8 on the sample 1, the sample stage 3 is tilted at intervals of a unit angle and on the basis of a prescribed surface by a motor 6, a reflected light from the sample 1 is received by a CCD 16, and an operational analysis circuit 21, in response to a command from a CPU 17 and based on the data of light reception obtained by the CCD 16 at intervals of a unit tilting angle, performs an operational analysis on the surface shape of the sample.
摘要翻译： 提供一种测量表面形状的装置，其使得能够通过简单的过程精确和定量地测量样品的表面形状。 将样品1放置在样品台3上，通过光学系统8在样品1上投射光，样品台3以单位角度的间隔倾斜并且通过电动机6基于规定的表面倾斜， 来自样品1的反射光由CCD 16和操作分析电路21响应于来自CPU 17的命令并且基于由CCD 16获得的光接收数据以单位倾斜角度的间隔接收 对样品的表面形状进行操作分析。
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4.发明授权
公开(公告)号：US5731209A
公开(公告)日：1998-03-24
申请号：US614206
申请日：1996-03-12
CPC分类号： G01N21/31 , Y10T436/17 , Y10T436/176152
摘要： An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference .DELTA..alpha.(=.alpha..sub.N -.alpha.) in the absorption coefficient of light of a wavelength identical with the wavelength .lambda..sub.N due to the excitons under constraint in the isoelectronic trap between the semiconductors with (.alpha..sub.N) and without (.alpha.) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of .DELTA..alpha..
摘要翻译： 提出了一种有效的方法来确定作为等电子阱添加的间接转移化合物半导体如磷化镓中的氮浓度。 该方法利用这样一个事实，即由于激子在约束条件下，在与波长λN相同的波长的光的吸收系数中，氮浓度和差ΔTA（=αNa-α）之间保持相称性的良好相关性 在具有（αN）和没有（α）氮的氮的半导体之间的等电子阱中。 介绍了通过SIMS方法测定的氮浓度与DELTAα值之间的工作曲线。
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公开(公告)号：US5349208A
公开(公告)日：1994-09-20
申请号：US147480
申请日：1993-11-05
CPC分类号： H01L33/305 , H01L24/32 , H01L2924/12036 , H01L2924/12041
摘要： To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.
摘要翻译： 为获得GaP发光元件基板，其提供具有较低亮度色散和高亮度的GaP发光二极管。 一种GaP发光元件基板，包括在n型GaP单晶衬底上依次层叠的n型GaP缓冲层，n型GaP层和p型GaP层，其中， 型GaP缓冲层保持在6×10 15 [原子/ cc]以下。
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公开(公告)号：US5234534A
公开(公告)日：1993-08-10
申请号：US719331
申请日：1992-07-27
CPC分类号： C30B19/10 , C30B19/04 , C30B29/44 , C30B7/005 , Y10S117/906
摘要： A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.
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公开(公告)号：US5603761A
公开(公告)日：1997-02-18
申请号：US510861
申请日：1995-08-03
IPC分类号： C30B19/00 , C30B19/06 , C30B29/44 , C30B35/00 , H01L21/208
CPC分类号： C30B19/064 , Y10T117/10 , Y10T117/1024
摘要： In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least one second vent hole and at least two sub-chambers separated by a partition plate and communicated with each other via a communicating portion; and before the substrates and the solution for liquid phase growth are brought into contact with each other, the deposition chamber and the solution chamber are revolved for causing the solution for liquid phase growth to move through the communicating portion so as to increase and decrease the volume of space portions of the respective sub-chambers and thereby replacement of a heat-treatment gas in the deposition chamber and the solution chamber is undertaken to achieve heat treatment. With this heat-treatment, surface oxide films on the substrates and the solution are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities.
摘要翻译： 在改进的液相外延生长方法和装置中，其中多个基板被放置在具有至少一个第一通气孔的沉积室中; 用于液相生长的溶液被保持在具有至少一个第二通气孔的溶液室中，并且至少两个分隔开的隔板通过连通部分彼此连通; 在基板和液相生长用溶液彼此接触之前，使沉积室和溶液室旋转，使液相生长溶液移动通过连通部，从而增大和减小体积 的各个副室的空间部分，由此更换沉积室和溶液室中的热处理气体以实现热处理。 通过这种热处理，去除了基板上的表面氧化膜和溶液，从而可以获得具有优良品质的液相外延层。
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公开(公告)号：US5514881A
公开(公告)日：1996-05-07
申请号：US377132
申请日：1995-01-23
CPC分类号： H01L33/30 , H01L33/025 , H01L33/305
摘要： A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc, but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.
摘要翻译： 一种用于GaP型发光器件的半导体衬底，其包括在n型GaP单晶衬底上形成的n型单晶衬底，n型GaP层和p型GaP层。 n型GaP单晶衬底中的碳浓度大于1.0×1016原子/ cc，但小于1.0×10 17原子/ cc。 n型GaP单晶基板是通过使用液态封装法，其使用含有对应于200ppm以上的水的B 2 O 3作为封装液体的液体封装法，由n型GaP单晶获得。
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公开(公告)号：US5985023A
公开(公告)日：1999-11-16
申请号：US620158
申请日：1996-03-22
IPC分类号： C30B19/10 , C30B29/44 , H01L21/208 , H01L33/30
CPC分类号： H01L33/025 , H01L21/02392 , H01L21/0254 , H01L21/02543 , H01L21/0257 , H01L21/02625 , H01L21/02628 , H01L33/0062
摘要： While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides a reliable and efficient means to accomplish a high nitrogen concentration by the increase of the concentration of ammonia as a nitrogen source in the doping atmosphere to the contrary to the general understanding that increase of the ammonia concentration to exceed a limit rather has an effect of decreasing the concentration of nitrogen doped in the epitaxial layer. The inventive method is based on the discovery that an exponential relationship is held between the growth rate of the epitaxial layer and the concentration of nitrogen in the thus grown epitaxial layer.
摘要翻译： 作为发光二极管材料的外延晶片中的氮掺杂的磷化镓外延层希望具有高浓度的氮以提高发光效率，本发明提供了一种可靠和有效的方法， 通过在掺杂气氛中作为氮源的氨的浓度的增加来实现高氮浓度，这与普遍认识到氨浓度超过极限的增加相反，具有降低氮掺杂浓度的作用 外延层。 本发明的方法是基于这样的发现，即在外延层的生长速率和由此生长的外延层中的氮浓度之间保持指数关系。
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10.发明授权Method for fabricating a gap type semiconductor substrate of red light emitting devices 失效用于制造红色发光器件的间隙型半导体衬底的方法
公开(公告)号：US5851850A
公开(公告)日：1998-12-22
申请号：US516096
申请日：1995-08-17
CPC分类号： H01L33/025 , H01L33/0062
摘要： A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.
摘要翻译： 一种用于GaP型发光器件的半导体衬底，其包括在n型GaP单晶衬底上形成的n型单晶衬底，n型GaP层和p型GaP层。 n型GaP单晶衬底中的碳浓度大于1.0×1016原子/ cc但小于1.0×10 17原子/ cc。 n型GaP单晶基板是通过使用液态封装法，其使用含有对应于200ppm以上的水的B 2 O 3作为封装液体的液体封装法，由n型GaP单晶获得。
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