公开(公告)号：US09230804B2

公开(公告)日：2016-01-05

申请号：US13242827

申请日：2011-09-23

申请人： Sangmoon Lee ,  Euijoon Yoon ,  Jinsub Park ,  Sung Hyun Park

发明人： Sangmoon Lee ,  Euijoon Yoon ,  Jinsub Park ,  Sung Hyun Park

IPC分类号： H01L29/778 ,  H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02513 ,  H01L21/02628 ,  H01L21/02642 ,  H01L21/02647

摘要： A semiconductor device includes a first non-flat non-polar nitride semiconductor layer, a first structure layer on at least a portion of the surface of the first non-flat non-polar nitride semiconductor layer and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. The first non-flat non-polar nitride semiconductor layer includes a plurality of solid particles.

摘要翻译： 半导体器件包括第一非平坦非极性氮化物半导体层，第一非平坦非极性氮化物半导体层的表面的至少一部分上的第一结构层和第一非平坦非极性氮化物半导体层上的第一非极性氮化物半导体层 第一非平面非极性氮化物半导体层和第一结构层。 第一非平坦非极性氮化物半导体层包括多个固体颗粒。

公开(公告)号：US08883548B2

公开(公告)日：2014-11-11

申请号：US13280164

申请日：2011-10-24

申请人： John W. Sherohman ,  Jick Hong Yee ,  Arthur W. Combs, III

发明人： John W. Sherohman ,  Jick Hong Yee ,  Arthur W. Combs, III

IPC分类号： H01L31/0304 ,  H01L31/073 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/036 ,  H01L31/0735 ,  H01L21/02

CPC分类号： H01L31/0304 ,  H01L21/02398 ,  H01L21/02549 ,  H01L21/02562 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/073 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1864 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

摘要翻译： 电子设备质量通过受控大气退火生产的铝锑（AlSb）基单晶被用于太阳能电池应用的各种配置。 像GaAs基太阳能电池器件那样，如本文公开的基于AlSb的太阳能电池器件提供将太阳能直接转换成电力。

公开(公告)号：US08652959B2

公开(公告)日：2014-02-18

申请号：US13756566

申请日：2013-02-01

申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

IPC分类号： H01L21/28

CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

公开(公告)号：US08461664B2

公开(公告)日：2013-06-11

申请号：US13115453

申请日：2011-05-25

申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

IPC分类号： H01L29/20

CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

公开(公告)号：US07923098B2

公开(公告)日：2011-04-12

申请号：US11968544

申请日：2008-01-02

申请人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

发明人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

IPC分类号： B32B7/02 ,  C30B19/00

CPC分类号： H01L21/02521 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02549 ,  Y10T428/24942 ,  Y10T428/2495

摘要： A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.

摘要翻译： 包含第一晶体材料，外延生长在第一晶体材料上的第二晶体材料层和在第二层上外延生长的第三晶体材料层的低缺陷密度晶体结构使得第二层位于 第一结晶材料和第三结晶材料。 第二和第三结晶材料配合以形成期望的关系。 第二结晶材料和第三结晶材料的晶体结构具有比第一结晶材料和第三结晶材料更高的结晶相容性。 第二结晶材料层足够厚以与第三结晶材料形成期望的关系，但对于要应变的第二晶体材料层来说足够薄。 如果第三层在无应变的第二层上生长，则将第三晶体材料层生长至超过厚度的厚度。

公开(公告)号：US20090169843A1

公开(公告)日：2009-07-02

申请号：US11968544

申请日：2008-01-02

申请人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

发明人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

IPC分类号： B32B7/02 ,  C30B19/00

CPC分类号： H01L21/02521 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02549 ,  Y10T428/24942 ,  Y10T428/2495

摘要： A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.

摘要翻译： 包含第一晶体材料，外延生长在第一晶体材料上的第二晶体材料层和在第二层上外延生长的第三晶体材料层的低缺陷密度晶体结构使得第二层位于 第一结晶材料和第三结晶材料。 第二和第三结晶材料配合以形成期望的关系。 第二结晶材料和第三结晶材料的晶体结构具有比第一结晶材料和第三结晶材料更高的结晶相容性。 第二结晶材料层足够厚以与第三结晶材料形成期望的关系，但对于要应变的第二晶体材料层来说足够薄。 如果第三层在无应变的第二层上生长，则将第三晶体材料层生长至超过厚度的厚度。

公开(公告)号：US4828938A

公开(公告)日：1989-05-09

申请号：US851004

申请日：1986-04-11

申请人： Lawrence S. Lichtmann ,  James D. Parsons

发明人： Lawrence S. Lichtmann ,  James D. Parsons

IPC分类号： C01B19/04 ,  C23C16/18 ,  C23C16/22 ,  C23C16/28 ,  C23C16/30 ,  C23C16/44 ,  C30B25/02 ,  C30B29/48 ,  H01L21/365

CPC分类号： H01L21/0262 ,  C23C16/306 ,  C30B25/02 ,  C30B29/48 ,  H01L21/02398 ,  H01L21/02411 ,  H01L21/02562 ,  Y10S428/938

摘要： A method for chemical vapor deposition of materials containing tellurium, such as cadmium telluride and mercury cadmium telluride, wherein the reactant source of the tellurium is a tellurophene or methyltellurol. These reactant sources have high vapor pressures, and the reactant source vapors emitted from the reactant sources have decomposition temperatures of less than about 300.degree. C., so that deposition may be accomplished at low temperatures of about 250.degree. C. The reactant source vapor containing tellurium is mixed with a reactant source vapor containing another substance to be codeposited, such as dimethylcadmium or dimethylmercury, and contacted with a substrate maintained at the deposition temperature, the deposition being preferably accomplished in an inverted vertical chemical vapor deposition reactor.

摘要翻译： 用于化学气相沉积包含碲的材料的方法，例如碲化镉和碲化汞镉，其中碲的反应物源是一种特氟氯丙烯或甲基碲酚。 这些反应物源具有高蒸气压，并且从反应物源排出的反应物源蒸气具有小于约300℃的分解温度，使得可以在约250℃的低温下进行沉积。含有 将碲与含有待共沉积的另一物质的反应物源蒸气混合，例如二甲基镉或二甲基汞，并与保持在沉积温度的基材接触，沉积优选在倒置的垂直化学气相沉积反应器中完成。

公开(公告)号：US3948692A

公开(公告)日：1976-04-06

申请号：US482595

申请日：1974-06-24

申请人： Lev Vasilievich Golubev ,  Evgeny Fedorovich Korneev ,  Jury Vasilievich Shmartsev

发明人： Lev Vasilievich Golubev ,  Evgeny Fedorovich Korneev ,  Jury Vasilievich Shmartsev

IPC分类号： C30B19/10 ,  H01L21/208 ,  H01L7/38

CPC分类号： C30B19/106 ,  C30B19/103 ,  H01L21/02398 ,  H01L21/02549 ,  H01L21/02625 ,  H01L21/02628

摘要： The method of preparing multi-layer semiconductor heterostructures on the basis of compounds A.sup.III B.sup.V, where A.sup.III is an element of the third group and B.sup.V is an element of the fifth group, consists in crystallization of layers of this heterostructure on a substrate from a liquid zone which is gallium or bismuth pre-saturated with compounds A.sup.III B.sup.V from a source which is a solid solution of compounds A.sup.III B.sup.V feeding the liquid zone with the material of the crystallizing layers.

摘要翻译： 基于化合物AIIIBV制备多层半导体异质结构的方法，其中AIII是第三组的元素，BV是第五组的元素，其方法在于从液体区在基底上的该异质结构层的结晶 其是来自源的化合物AIIIBV的镓或铋，其是将液体区域与结晶层的材料进料的化合物AIIIBV的固溶体。

公开(公告)号：US3634143A

公开(公告)日：1972-01-11

申请号：US3634143D

申请日：1969-05-08

申请人： AVCO CORP

发明人： BRENNAN LEO C

IPC分类号： C30B23/02 ,  H01L21/203 ,  B01J17/30

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  Y10S420/903

摘要： A single crystal InAs-InSb alloy is prepared on a III-V substrate by flash evaporation of a mixture of granulated InAs and InSb in a vacuum system, subsequent condensation and solidification of the vapor on the substrate and subsequent annealing. The flash evaporation and solidification is thus followed by suitable annealing of the deposited material for several weeks at a temperature close to but below the solidus temperature of the alloy. Prior to annealing, an oxide film may be formed on the deposited alloy to prevent loss of the more volatile constituents.

摘要翻译： 通过在真空系统中闪蒸制粒的InAs和InSb的混合物，随后在衬底上冷凝和凝固蒸汽并随后退火，在III-V衬底上制备单晶InAs-InSb合金。 闪蒸和固化之后，在接近于或低于合金固相线温度的温度下对沉积材料进行合适的退火几周。 在退火之前，可以在沉积的合金上形成氧化物膜以防止更易挥发的组分的损失。

公开(公告)号：US12027589B2

公开(公告)日：2024-07-02

申请号：US17087968

申请日：2020-11-03

申请人： Samsung Electronics Co., Ltd.

发明人： Keunwook Shin ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Seunggeol Nam ,  Seongjun Park ,  Yunseong Lee

IPC分类号： H01L29/16 ,  C01B32/186 ,  H01L21/02

CPC分类号： H01L29/1606 ,  C01B32/186 ,  H01L21/02384 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0262

摘要： Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.