Abstract:
The mark position is measured with a multi-beam with high accuracy. A multi charged particle beam writing method includes forming a multi-beam (30a-30e) in which charged particle beams are arranged with a predetermined pitch, irradiating a mark (M) with beams in an on-beam region while shifting irradiation positions of the charged particle beams by sequentially changing the on-beam region in which beams in a partial region of the multi-beam (30a-30e) are set to ON, the mark (M) being provided at a predetermined position and having a width greater than the predetermined pitch, detecting a reflected charged particle signal from the mark (M), and calculating a position of the mark (M), and adjusting the irradiation positions of the multi-beam based on the calculated position of the mark (M), and writing a pattern.
Abstract:
According to one aspect of the present invention, a rotation angle measuring method of a multi-charged particle beam image includes two-dimensionally scanning a mark arranged on a stage in a multi-charged particle beam writing apparatus using, among multi-charged particle beams that can be used for exposure, a plurality of representative beams of which number is smaller than the number of beams constituting the multi-charged particle beams, creating a two-dimensional image of the plurality of representative beams based on signals obtained by two-dimensional scanning, and acquiring a rotation angle of the multi-charged particle beam image using the two-dimensional image.
Abstract:
A charged-particle beam drawing method includes: storing a plurality of time interval patterns defining time intervals for performing a diagnosis of a drift amount of charged-particle beam; drawing a predetermined drawing pattern on a sample by irradiating the beam on the sample; receiving first event information including occurrence of event and type of event; acquiring region information specifying a region being drawn by the beam; selecting a specific time interval pattern from the plurality of time interval patterns based on the type of the event of the first event information and the region information; diagnosing the drift amount of the beam based on the specific time interval pattern, until second event information is received, the second event information includes occurrence of event and type of event; and drawing a predetermined drawing pattern on the sample while performing a drift correction of the charged-particle beam, based on the diagnosing.
Abstract:
In one embodiment, a multi-charged-particle-beam writing apparatus includes a shaping aperture array plate including a plurality of first apertures through which a charged particle beam passes to form multiple beams, a movable stage on which a writing target substrate is placed, an inspection aperture plate disposed on the stage, the inspection aperture plate including a second aperture through which one of the multiple beams passes, a current detector detecting a current of the beam that has passed through the second aperture of the inspection aperture plate, a deflector deflecting the multiple beams, the deflector controlling deflection of one of the multiple beams such that the one beam is located at a predetermined position in a region including the second aperture and a surrounding region of the second aperture, and a calculator obtaining a beam position based on the beam current detected by the current detector.
Abstract:
According to one embodiment, a multi charged particle beam writing apparatus includes an objective lens adjusting a focus position of multiple beams, a coil correcting astigmatism of the multiple beams, an inspection aperture disposed in a stage and configured to allow one beam of the multiple beams to pass therethrough, a deflector deflecting the multiple beams, a current detector detecting a beam current of each beam of the multiple beams scanned over the inspection aperture in the XY direction and passed through the inspection aperture, and a controller generating a beam image on the basis of the detected beam current, calculating a feature quantity of the beam image, and controlling the objective lens or the coil on the basis of the feature quantity.
Abstract:
An aperture array alignment method according to the present embodiment includes switching on and off of each of multiple beams using a blanking aperture array plate, and detecting beam current on a stage using a detector. At least one of the multiple beams is turned on to scan the blanking aperture array plate, and a current map is generated on the basis of a result of detection of the beam current made by the detector and a position of the blanking aperture array plate. An on-beam is switched from one to another to generate the current map for each of the on-beams. The position of the blanking aperture array plate is adjusted on the basis of the current maps for the on-beams.
Abstract:
In one embodiment, a multi charged particle beam writing apparatus includes an aperture plate having a plurality of holes to form multiple beams, a blanking aperture array having a plurality of blankers which switch ON-OFF of corresponding respective beams among the multiple beams, a stage on which a writing target substrate is placed, an inspection aperture provided on the stage and that allows one beam among the multiple beams to pass therethrough, a deflector deflecting the multiple beams, a current detector detecting a beam current of each of the multiple beams that has passed through the inspection aperture in a case where the multiple beams are scanned on the inspection aperture, and a control computing machine that generates a beam image based on the detected beam current and detects a defect of the blanking aperture array or the aperture plate based on the beam image.
Abstract:
A method of measuring beam positions of multi charged particle beams includes acquiring the number of beams of multi charged particle beams, needed for the measurement reproducibility of a current amount to be within the range of an allowable value, setting a plurality of measurement points depending on a desired dimensional accuracy value, in an irradiation region irradiated by the whole of the multi charged particle beams, setting, for each of a plurality of measurement points, a beam region, including a measurement point of a plurality of measurement points, irradiated by a plurality of beams whose number is the number of beams needed for the measurement reproducibility in the multi charged particle beams, and measuring, for each of a plurality of measurement points, the position of a measurement point concerned in a plurality of measurement points by using a plurality of beams of a corresponding beam region.
Abstract:
In one embodiment, a multi charged particle beam writing apparatus includes an aperture plate forming multiple beams, a stage on which a writing target substrate is placed, a stage position detector detecting the position of the stage, an inspection aperture plate provided in the stage, the inspection aperture plate permitting one of the multiple beams to pass through the inspection aperture plate, a deflector deflecting the multiple beams, a current detector detecting a beam current of each of the multiple beams scanned over the inspection aperture plate in X and Y directions and passed through the inspection aperture plate, and a control computer generating a beam image based on the detected beam currents and calculating positions of the beams based on the beam image and the position of the stage.
Abstract:
In one embodiment, a multi charged-particle beam writing apparatus includes a plurality of blankers switching between ON and OFF state of a corresponding beam among multiple beams, a main deflector deflecting beams having been subjected to blanking deflection to a writing position of the beams in accordance with movement of a stage, a detector scanning a mark on the stage with each of the beams having been deflected by the main deflector and detecting a beam position from a change in intensity of reflected charged particles and a position of the stage, and a beam shape calculator switching an ON beam, scanning the mark with the ON beam, and calculating a shape of the multiple beams from a beam position. A shape of a deflection field of the main deflector is corrected by using a polynomial representing an amount of beam position shift that is dependent on a beam deflection position of the main deflector and then the mark is scanned with the ON beam. The polynomial is different for each ON beam.