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1.发明授权Methods for forming interconnect structures for integration of multi-layered integrated circuit devices 有权形成用于集成多层集成电路器件的互连结构的方法公开(公告)号：US08664112B2
公开(公告)日：2014-03-04
申请号：US13085122
申请日：2011-04-12
Applicant: Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
Inventor： Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
IPC: H01L23/52
CPC classification number: H01L23/5283 , H01L21/76805 , H01L21/76816 , H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L23/53209 , H01L23/5329 , H01L25/0657 , H01L25/50 , H01L27/105 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
Abstract: Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. Methods of forming semiconductor devices comprising at least one interconnect structure are also disclosed.
Abstract translation: 半导体器件包括至少一个集成电路层，至少一个导电迹线和与至少一个导电迹线的至少一部分相邻的绝缘材料。 至少一个互连结构延伸穿过所述至少一个导电迹线的一部分和所述绝缘材料的一部分，所述至少一个互连结构包括穿过所述至少一个导电迹线的横向截面尺寸，所述导电迹线与横向交叉不同 通过绝缘材料的尺寸。 还公开了形成包括至少一个互连结构的半导体器件的方法。
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公开(公告)号：US08282999B2
公开(公告)日：2012-10-09
申请号：US12098124
申请日：2008-04-04
Applicant: Nishant Sinha , Gurtej S. Sandhu , John Smythe
Inventor： Nishant Sinha , Gurtej S. Sandhu , John Smythe
CPC classification number: H01L21/02282 , B01D19/0078 , B01F11/0071 , B05C11/02 , B05D1/005 , B05D3/12 , B08B3/12 , G03D3/04 , G03F7/162 , H01L21/31051 , H01L21/31058 , H01L21/312 , H01L21/67017 , H01L21/67092 , H01L21/6715 , H01L21/76819
Abstract: An apparatus and process operate to impose sonic pressure upon a spin-on film liquid mass that exhibits a liquid topography and in a solvent vapor overpressure to alter the liquid topography. Other apparatus and processes are disclosed.
Abstract translation: 一种装置和方法用于将声波压力施加在展现液体形貌和溶剂蒸汽超压中以改变液体形貌的旋涂膜液体质量上。 公开了其他装置和方法。
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公开(公告)号：US07749327B2
公开(公告)日：2010-07-06
申请号：US11933770
申请日：2007-11-01
Applicant: Nishant Sinha , Gurtej S. Sandhu
Inventor： Nishant Sinha , Gurtej S. Sandhu
CPC classification number: B08B3/10 , B08B7/02 , B24C3/322 , B24C7/0007 , H01L21/02052 , H01L21/02057 , H01L21/67051
Abstract: Some embodiments include methods for treating surfaces. Beads and/or other insolubles may be dispersed within a liquid carrier to form a dispersion. A transfer layer may be formed across a surface. The dispersion may be directed toward the transfer layer, and the insolubles may impact the transfer layer. The impacting may generate force in the transfer layer, and such force may be transferred through the transfer layer to the surface. The surface may be a surface of a semiconductor substrate, and the force may be utilized to sweep contaminants from the semiconductor substrate surface. The transfer layer may be a liquid, and in some embodiments may be a cleaning solution.
Abstract translation: 一些实施方案包括用于处理表面的方法。 珠和/或其他不溶物可以分散在液体载体中以形成分散体。 可以跨越表面形成转印层。 分散体可以指向转移层，并且不溶物可能影响转移层。 冲击可能在转移层中产生力，并且这种力可以通过转移层转移到表面。 表面可以是半导体衬底的表面，并且该力可用于从半导体衬底表面扫除污染物。 转移层可以是液体，并且在一些实施方案中可以是清洁溶液。
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公开(公告)号：US20090114246A1
公开(公告)日：2009-05-07
申请号：US11933770
申请日：2007-11-01
Applicant: Nishant Sinha , Gurtej S. Sandhu
Inventor： Nishant Sinha , Gurtej S. Sandhu
CPC classification number: B08B3/10 , B08B7/02 , B24C3/322 , B24C7/0007 , H01L21/02052 , H01L21/02057 , H01L21/67051
Abstract: Some embodiments include methods for treating surfaces. Beads and/or other insolubles may be dispersed within a liquid carrier to form a dispersion. A transfer layer may be formed across a surface. The dispersion may be directed toward the transfer layer, and the insolubles may impact the transfer layer. The impacting may generate force in the transfer layer, and such force may be transferred through the transfer layer to the surface. The surface may be a surface of a semiconductor substrate, and the force may be utilized to sweep contaminants from the semiconductor substrate surface. The transfer layer may be a liquid, and in some embodiments may be a cleaning solution.
Abstract translation: 一些实施方案包括用于处理表面的方法。 珠和/或其他不溶物可以分散在液体载体中以形成分散体。 可以跨越表面形成转印层。 分散体可以指向转移层，并且不溶物可能影响转移层。 冲击可能在转移层中产生力，并且这种力可以通过转移层转移到表面。 表面可以是半导体衬底的表面，并且该力可用于从半导体衬底表面扫除污染物。 转移层可以是液体，并且在一些实施方案中可以是清洁溶液。
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公开(公告)号：US08034315B2
公开(公告)日：2011-10-11
申请号：US12235244
申请日：2008-09-22
Applicant: Nishant Sinha , Gurtej S. Sandhu , Eugene Marsh , Neil Greeley , John Smythe
Inventor： Nishant Sinha , Gurtej S. Sandhu , Eugene Marsh , Neil Greeley , John Smythe
IPC: H01L29/72
CPC classification number: H01L51/0591 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L45/1675 , H01L45/1683 , H01L51/0048 , Y10S977/712 , Y10S977/721 , Y10S977/745 , Y10S977/748 , Y10S977/764 , Y10S977/765 , Y10S977/781
Abstract: Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.
Abstract translation: 一些实施方案包括含有CNT束的装置。 起伏的形貌在碳纳米管之间和CNT之间的空间内延伸。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料直接在碳纳米管之上，其中材料是具有超过全局最大横向宽度的最小横截面赤道宽度的多个颗粒。 一些实施例包括在半导体衬底上形成多个交叉碳纳米管的方法。 CNT形成延伸跨过CNT并且在CNT之间的空间内的波状上部形貌。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料沉积在CNT上，其中材料被沉积成具有超过全局最大横向宽度的最小横截面赤道宽度的颗粒。
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Patent Agency Ranking
公开(公告)号：US20110193190A1
公开(公告)日：2011-08-11
申请号：US13088863
申请日：2011-04-18
Applicant: Nishant Sinha , Gurtej S. Sandhu , John Smythe
Inventor： Nishant Sinha , Gurtej S. Sandhu , John Smythe
IPC: H01L29/06 , H01L21/762
CPC classification number: H01L21/76254
Abstract: Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.
Abstract translation: 电子设备，系统和方法包括结合到晶片或基板的主体区域的半导体层，其中半导体层可以使用电磁辐射结合到主体区域。 公开了附加装置，系统和方法。
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公开(公告)号：US07837805B2
公开(公告)日：2010-11-23
申请号：US11847073
申请日：2007-08-29
Applicant: Gurtej S. Sandhu , Nishant Sinha
Inventor： Gurtej S. Sandhu , Nishant Sinha
CPC classification number: H01L21/67051 , B08B3/02 , B24C1/003 , B24C5/005 , H01L21/02096
Abstract: Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles.
Abstract translation: 一些实施方案包括用气溶胶颗粒处理表面的方法。 气溶胶颗粒可以形成为液体颗粒，然后在使颗粒撞击表面之前改变颗粒的弹性的条件下通过室。 弹性的变化可能是弹性的增加或弹性的降低。 弹性变化可以通过引起气溶胶颗粒的一种或多种组分的相变，例如通过至少部分地冷冻气溶胶颗粒，或通过在气溶胶颗粒内形成夹带的气泡来实现。 一些实施方案包括在用气溶胶颗粒处理表面期间可以使用的装置。
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8.发明申请Devices Comprising Carbon Nanotubes, And Methods Of Forming Devices Comprising Carbon Nanotubes 有权包含碳纳米管的装置以及包含碳纳米管的成形装置的方法公开(公告)号：US20100276656A1
公开(公告)日：2010-11-04
申请号：US12235244
申请日：2008-09-22
Applicant: Nishant Sinha , Gurtej S. Sandhu , Eugene Marsh , Neil Greeley , John Smythe
Inventor： Nishant Sinha , Gurtej S. Sandhu , Eugene Marsh , Neil Greeley , John Smythe
CPC classification number: H01L51/0591 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L45/1675 , H01L45/1683 , H01L51/0048 , Y10S977/712 , Y10S977/721 , Y10S977/745 , Y10S977/748 , Y10S977/764 , Y10S977/765 , Y10S977/781
Abstract: Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.
Abstract translation: 一些实施方案包括含有CNT束的装置。 起伏的形貌在碳纳米管之间和CNT之间的空间内延伸。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料直接在碳纳米管之上，其中材料是具有超过全局最大横向宽度的最小横截面赤道宽度的多个颗粒。 一些实施例包括在半导体衬底上形成多个交叉碳纳米管的方法。 CNT形成延伸跨过CNT并且在CNT之间的空间内的波状上部形貌。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料沉积在CNT上，其中材料被沉积成具有超过全局最大横向宽度的最小横截面赤道宽度的颗粒。
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9.发明申请公开(公告)号：US20100013107A1
公开(公告)日：2010-01-21
申请号：US12174393
申请日：2008-07-16
Applicant: Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
Inventor： Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
IPC: H01L23/52 , H01L21/4763
CPC classification number: H01L23/5283 , H01L21/76805 , H01L21/76816 , H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L23/53209 , H01L23/5329 , H01L25/0657 , H01L25/50 , H01L27/105 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
Abstract: Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. Methods of forming semiconductor devices comprising at least one interconnect structure are also disclosed.
Abstract translation: 半导体器件包括至少一个集成电路层，至少一个导电迹线和与至少一个导电迹线的至少一部分相邻的绝缘材料。 至少一个互连结构延伸穿过所述至少一个导电迹线的一部分和所述绝缘材料的一部分，所述至少一个互连结构包括穿过所述至少一个导电迹线的横向截面尺寸，所述导电迹线与横向交叉不同 通过绝缘材料的尺寸。 还公开了形成包括至少一个互连结构的半导体器件的方法。
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公开(公告)号：US20090253271A1
公开(公告)日：2009-10-08
申请号：US12098124
申请日：2008-04-04
Applicant: Nishant Sinha , Gurtej S. Sandhu , John Smythe
Inventor： Nishant Sinha , Gurtej S. Sandhu , John Smythe
IPC: H01L21/469
CPC classification number: H01L21/02282 , B01D19/0078 , B01F11/0071 , B05C11/02 , B05D1/005 , B05D3/12 , B08B3/12 , G03D3/04 , G03F7/162 , H01L21/31051 , H01L21/31058 , H01L21/312 , H01L21/67017 , H01L21/67092 , H01L21/6715 , H01L21/76819
Abstract: An apparatus and process operate to impose sonic pressure upon a spin-on film liquid mass that exhibits a liquid topography and in a solvent vapor overpressure to alter the liquid topography. Other apparatus and processes are disclosed.
Abstract translation: 一种装置和方法用于将声波压力施加在展现液体形貌和溶剂蒸汽超压中以改变液体形貌的旋涂膜液体质量上。 公开了其他装置和方法。
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