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    Methods for treating surfaces
    6.
    发明授权
    Methods for treating surfaces 失效
    表面处理方法

    公开(公告)号：US07749327B2

    公开(公告)日：2010-07-06

    申请号：US11933770

    申请日：2007-11-01

    Applicant: Nishant Sinha ,  Gurtej S. Sandhu

    Inventor： Nishant Sinha ,  Gurtej S. Sandhu

    IPC: B08B3/00 ,  B08B3/04

    CPC classification number: B08B3/10 ,  B08B7/02 ,  B24C3/322 ,  B24C7/0007 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

    Abstract: Some embodiments include methods for treating surfaces. Beads and/or other insolubles may be dispersed within a liquid carrier to form a dispersion. A transfer layer may be formed across a surface. The dispersion may be directed toward the transfer layer, and the insolubles may impact the transfer layer. The impacting may generate force in the transfer layer, and such force may be transferred through the transfer layer to the surface. The surface may be a surface of a semiconductor substrate, and the force may be utilized to sweep contaminants from the semiconductor substrate surface. The transfer layer may be a liquid, and in some embodiments may be a cleaning solution.

    Abstract translation: 一些实施方案包括用于处理表面的方法。 珠和/或其他不溶物可以分散在液体载体中以形成分散体。 可以跨越表面形成转印层。 分散体可以指向转移层，并且不溶物可能影响转移层。 冲击可能在转移层中产生力，并且这种力可以通过转移层转移到表面。 表面可以是半导体衬底的表面，并且该力可用于从半导体衬底表面扫除污染物。 转移层可以是液体，并且在一些实施方案中可以是清洁溶液。

    Methods For Treating Surfaces
    7.
    发明申请
    Methods For Treating Surfaces 失效
    治疗表面的方法

    公开(公告)号：US20090114246A1

    公开(公告)日：2009-05-07

    申请号：US11933770

    申请日：2007-11-01

    Applicant: Nishant Sinha ,  Gurtej S. Sandhu

    Inventor： Nishant Sinha ,  Gurtej S. Sandhu

    IPC: B08B6/00 ,  B08B3/00

    CPC classification number: B08B3/10 ,  B08B7/02 ,  B24C3/322 ,  B24C7/0007 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

    Abstract: Some embodiments include methods for treating surfaces. Beads and/or other insolubles may be dispersed within a liquid carrier to form a dispersion. A transfer layer may be formed across a surface. The dispersion may be directed toward the transfer layer, and the insolubles may impact the transfer layer. The impacting may generate force in the transfer layer, and such force may be transferred through the transfer layer to the surface. The surface may be a surface of a semiconductor substrate, and the force may be utilized to sweep contaminants from the semiconductor substrate surface. The transfer layer may be a liquid, and in some embodiments may be a cleaning solution.

    Abstract translation: 一些实施方案包括用于处理表面的方法。 珠和/或其他不溶物可以分散在液体载体中以形成分散体。 可以跨越表面形成转印层。 分散体可以指向转移层，并且不溶物可能影响转移层。 冲击可能在转移层中产生力，并且这种力可以通过转移层转移到表面。 表面可以是半导体衬底的表面，并且该力可用于从半导体衬底表面扫除污染物。 转移层可以是液体，并且在一些实施方案中可以是清洁溶液。

    Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
    8.
    发明授权
    Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权
    形成非易失性电阻氧化物存储单元的方法和形成非易失性电阻氧化物存储器阵列的方法

    公开(公告)号：US09343665B2

    公开(公告)日：2016-05-17

    申请号：US12166604

    申请日：2008-07-02

    Applicant: Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu ,  Joseph Neil Greeley ,  Kunal R. Parekh

    Inventor： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu ,  Joseph Neil Greeley ,  Kunal R. Parekh

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1683 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

    Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

    Abstract translation: 形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。 含金属氧化物的材料形成在第一导电电极上。 蚀刻停止材料沉积在包含金属氧化物的材料上。 导电材料沉积在蚀刻停止材料上。 包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。 这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。 考虑其他实现。

    Methods of processing substrates and methods of forming conductive connections to substrates
    9.
    发明授权
    Methods of processing substrates and methods of forming conductive connections to substrates 有权
    处理衬底的方法和形成与衬底的导电连接的方法

    公开(公告)号：US08721901B2

    公开(公告)日：2014-05-13

    申请号：US11868331

    申请日：2007-10-05

    Applicant: Nishant Sinha ,  Gurtej S. Sandhu

    Inventor： Nishant Sinha ,  Gurtej S. Sandhu

    IPC: H01B13/00

    CPC classification number: H01L21/76879 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76867

    Abstract: Embodiments disclosed include methods of processing substrates, including methods of forming conductive connections to substrates. In one embodiment, a method of processing a substrate includes forming a material to be etched over a first material of a substrate. The material to be etched and the first material are of different compositions. The material to be etched is etched in a dry etch chamber to expose the first material. After the etching, the first material is contacted with a non-oxygen-containing gas in situ within the dry etch chamber effective to form a second material physically contacting onto the first material. The second material comprises a component of the first material and a component of the gas. In one embodiment, the first material is contacted with a gas that may or may not include oxygen in situ within the dry etch chamber effective to form a conductive second material.

    Abstract translation: 公开的实施例包括处理衬底的方法，包括形成与衬底的导电连接的方法。 在一个实施例中，处理衬底的方法包括在衬底的第一材料上形成待蚀刻的材料。 待蚀刻的材料和第一种材料具有不同的组成。 待蚀刻的材料在干蚀刻室中蚀刻以暴露第一材料。 在蚀刻之后，第一材料在干蚀刻室内原位与非含氧气体接触，有效地形成物理接触第一材料的第二材料。 第二材料包括第一材料的组分和气体的组分。 在一个实施方案中，第一材料与可在干蚀刻室内原位包含氧的气​​体接触，有效地形成导电的第二材料。

    Semiconductor material manufacture
    10.
    发明授权
    Semiconductor material manufacture 有权
    半导体材料制造

    公开(公告)号：US07927975B2

    公开(公告)日：2011-04-19

    申请号：US12365734

    申请日：2009-02-04

    Applicant: Nishant Sinha ,  Gurtej S. Sandhu ,  John Smythe

    Inventor： Nishant Sinha ,  Gurtej S. Sandhu ,  John Smythe

    IPC: H01L21/00

    CPC classification number: H01L21/76254

    Abstract: Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.

    Abstract translation: 电子设备，系统和方法包括结合到晶片或基板的主体区域的半导体层，其中半导体层可以使用电磁辐射结合到主体区域。 公开了附加装置，系统和方法。

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