公开(公告)号：US09730325B2

公开(公告)日：2017-08-08

申请号：US14155709

申请日：2014-01-15

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine ,  Kazutoshi Kamibayashi

IPC: H05K1/00 ,  H05K1/16 ,  H05K1/03 ,  H05K3/40

CPC classification number: H05K1/165 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K1/162 ,  H05K1/167 ,  H05K3/4061 ,  H05K2201/086 ,  H01L2924/00

Abstract: A substrate with built-in passive element includes passive elements and a substrate. The passive elements include at least one of a capacitor, an inductor, a resistor, a signal transmission element or an optical waveguide element. The capacitor, the inductor, the resistor, the signal transmission element or the optical waveguide element has a functional element filled in a groove-like or hole-like element forming region provided in the substrate along a thickness direction thereof. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound.

公开(公告)号：US09691519B2

公开(公告)日：2017-06-27

申请号：US14085377

申请日：2013-11-20

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: B05D3/02 ,  H01B3/18 ,  H01B3/46 ,  H01B13/06 ,  H01B3/00 ,  H01L23/48 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01B3/18 ,  H01B3/006 ,  H01B3/46 ,  H01B13/06 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An insulating paste includes insulating particles 311, Si particles 312 and an organic Si compound 320. The organic Si compound 320 reacts with the Si particles 312 to form a Si—O bond filling up the space around the insulating particles 311.

公开(公告)号：US09293416B2

公开(公告)日：2016-03-22

申请号：US14456461

申请日：2014-08-11

Applicant: Napra Co., Ltd.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: H01L23/522 ,  H01L23/532 ,  B22F1/00 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L23/53233 ,  B22F1/0003 ,  C22C1/0425 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49883 ,  H01L23/5328 ,  H01L2224/0557 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/81825 ,  H01L2224/8183 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A functional material includes at least two kinds of particles selected from the group consisting of first metal composite particles, second metal composite particles and third metal composite particles. The first metal composite particles, the second metal composite particles and the third metal composite particles each contain two or more kinds of metal components. The melting point T1(° C.) of the first metal composite particles, the melting point T2(° C.) of the second metal composite particles and the melting point T3(° C.) of the third metal composite particles satisfy a relationship of T1>T2>T3.

Abstract translation: 功能材料包括选自第一金属复合颗粒，第二金属复合颗粒和第三金属复合颗粒中的至少两种颗粒。 第一金属复合颗粒，第二金属复合颗粒和第三金属复合颗粒各自含有两种或更多种金属组分。 第一金属复合颗粒的熔点T1（℃），第二金属复合颗粒的熔点T2（℃）和第三金属复合颗粒的熔点T3（℃）满足关系 的T1> T2> T3。

公开(公告)号：US20150041990A1

公开(公告)日：2015-02-12

申请号：US14446621

申请日：2014-07-30

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Hiroaki Ikeda ,  Yurina Sekine

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/49827 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49894 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wiring substrate includes a semiconductor substrate, an insulator and a plurality of columnar conductors. The insulator is made of an insulating material filled in a groove or hole provided in the semiconductor substrate. The plurality of columnar conductors are filled in grooves or holes provided in the insulator. The grooves or holes are arranged at a narrow pitch in a plane of the insulator. The insulating material has a Si—O bond obtained by reacting Si particles with an organic Si compound.

Abstract translation: 布线基板包括半导体基板，绝缘体和多个柱状导体。 绝缘体由填充在设置在半导体衬底中的沟槽或孔中的绝缘材料制成。 多个柱状导体填充在设置在绝缘体中的槽或孔中。 凹槽或孔在绝缘体的平面中以窄间距排列。 绝缘材料具有通过使Si颗粒与有机Si化合物反应而获得的Si-O键。

公开(公告)号：US20130250481A1

公开(公告)日：2013-09-26

申请号：US13795285

申请日：2013-03-12

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: H01G4/008 ,  H01G4/12

CPC classification number: H01G4/008 ,  B22F1/0018 ,  B22F1/0059 ,  B22F1/0081 ,  B22F9/082 ,  B22F2001/0033 ,  B22F2009/084 ,  B22F2009/0888 ,  B22F2999/00 ,  B82Y30/00 ,  H01B1/22 ,  H01G4/0085 ,  H01G4/12 ,  H01G4/30 ,  B22F9/10 ,  B22F2202/13

Abstract: A conductive fine powder includes flat metal/alloy fine particles. The flat metal/alloy fine particles have a nanocomposite structure in which crystalline or non-crystalline nanoparticles are mixed or formed in a matrix. The flat metal/alloy fine particles have a maximum thickness of 50 nm or less and a maximum diameter at least twice the thickness and contain a high-melting-point metal and a low-melting-point metal.

Abstract translation: 导电性细粉末包含平坦的金属/合金细粒。 扁平金属/合金微粒具有纳米复合结构，其中结晶或非晶体纳米颗粒混合或形成基质。 扁平金属/合金微粒的最大厚度为50nm以下，最大直径为厚度的至少两倍，并且含有高熔点金属和低熔点金属。

公开(公告)号：US20170305743A1

公开(公告)日：2017-10-26

申请号：US15643417

申请日：2017-07-06

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: B82B3/00 ,  B22F3/22 ,  B22F7/04 ,  B29C70/02 ,  C03B19/12 ,  H05K3/40 ,  H01L21/768 ,  B22F3/10 ,  H01L21/48 ,  H01L21/56 ,  B81C99/00

CPC classification number: B82B3/0038 ,  B22F3/1021 ,  B22F3/22 ,  B22F7/04 ,  B29C70/02 ,  B81C99/0085 ,  C03B19/12 ,  H01L21/4867 ,  H01L21/563 ,  H01L21/76898 ,  H01L2224/32145 ,  H01L2924/1461 ,  H05K3/4053 ,  H05K2201/0215 ,  H05K2201/0305 ,  H05K2203/0425 ,  H01L2924/00

Abstract: A method for forming a functional part in a minute space includes the steps of: filling a minute space with a dispersion functional material in which a thermally-meltable functional powder is dispersed in a liquid dispersion medium; evaporating the liquid dispersion medium present in the minute space; and heating the functional powder and hardening it under pressure.

公开(公告)号：US09349720B2

公开(公告)日：2016-05-24

申请号：US14341956

申请日：2014-07-28

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: H01L29/00 ,  H01L27/04 ,  H01L27/06 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L27/04 ,  H01L21/02211 ,  H01L23/481 ,  H01L23/5223 ,  H01L27/0676 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically connected to the active element. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound.

Abstract translation: 集成电路器件包括半导体衬底，有源元件和无源元件。 有源元件由半导体衬底制成。 无源元件包括填充在半导体衬底中沿其厚度方向设置的沟槽中的功能元件，并且电连接到有源元件。 功能元件具有通过使Si颗粒与有机Si化合物反应而获得的Si-O键区域。

公开(公告)号：US20150357273A1

公开(公告)日：2015-12-10

申请号：US14826603

申请日：2015-08-14

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: H01L23/498

CPC classification number: H01L21/76898 ,  H01L21/02109 ,  H01L21/02225 ,  H01L21/02227 ,  H01L21/02269 ,  H01L21/28 ,  H01L21/768 ,  H01L21/76838 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A semiconductor substrate includes a vertical conductor and an insulating layer. The vertical conductor includes a metal/alloy component of a nanocomposite crystal structure and is filled in a vertical hole formed in the semiconductor substrate along its thickness direction. The insulating layer is formed around the vertical conductor in a ring shape and includes nm-sized silica particles and a nanocrystal or nanoamorphous silica filling up a space between the silica particles to provide a nanocomposite structure along with the silica particles.

Abstract translation: 半导体衬底包括垂直导体和绝缘层。 垂直导体包括纳米复合晶体结构的金属/合金成分，并且沿其厚度方向填充在半导体衬底中形成的垂直孔中。 绝缘层围绕垂直导体形成为环形，并且包括nm尺寸的二氧化硅颗粒和填充二氧化硅颗粒之间的空间的纳米晶体或纳米无定形二氧化硅，以提供与二氧化硅颗粒一起的纳米复合结构。

公开(公告)号：US20130277850A1

公开(公告)日：2013-10-24

申请号：US13859175

申请日：2013-04-09

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: H01L23/48

CPC classification number: H01L23/48 ,  H01B1/22 ,  H01L21/4867 ,  H01L21/563 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49883 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/16 ,  H01L31/022425 ,  H01L31/0682 ,  H01L33/62 ,  H01L2224/0332 ,  H01L2224/0341 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05205 ,  H01L2224/05209 ,  H01L2224/05211 ,  H01L2224/05213 ,  H01L2224/05318 ,  H01L2224/05324 ,  H01L2224/05338 ,  H01L2224/05339 ,  H01L2224/05344 ,  H01L2224/05347 ,  H01L2224/05355 ,  H01L2224/0536 ,  H01L2224/05366 ,  H01L2224/05369 ,  H01L2224/05562 ,  H01L2224/0569 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81375 ,  H01L2224/81395 ,  H01L2224/81505 ,  H01L2224/81509 ,  H01L2224/81511 ,  H01L2224/81513 ,  H01L2224/81618 ,  H01L2224/81624 ,  H01L2224/81638 ,  H01L2224/81639 ,  H01L2224/81644 ,  H01L2224/81647 ,  H01L2224/81655 ,  H01L2224/8166 ,  H01L2224/81666 ,  H01L2224/81669 ,  H01L2224/831 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2933/0016 ,  H01L2933/0066 ,  Y02E10/547 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An electronic device includes a substrate and an electronic component. The substrate has a metallization trace. The metallization trace has a metallization layer and a synthetic resin layer. The metallization layer has a high-melting-point metallic component and a low-melting-point metallic component. The high-melting-point metallic component and the low-melting-point metallic component are diffusion bonded together and adhered to a surface of the substrate. The synthetic resin layer is formed simultaneously with the metallization layer to cover a surface of the metallization layer with a thickness in the range of 5 nm to 1000 nm. The electronic component is electrically connected to the metallization layer.

Abstract translation: 电子设备包括基板和电子部件。 衬底具有金属化迹线。 金属化迹线具有金属化层和合成树脂层。 金属化层具有高熔点金属成分和低熔点金属成分。 高熔点金属成分和低熔点金属成分被扩散接合在一起并附着在基板的表面。 合成树脂层与金属化层同时形成，以覆盖金属化层的表面，厚度在5nm至1000nm的范围内。 电子部件电连接到金属化层。

公开(公告)号：US09950925B2

公开(公告)日：2018-04-24

申请号：US15643417

申请日：2017-07-06

Applicant: NAPRA CO., LTD.

Inventor： Shigenobu Sekine ,  Yurina Sekine

IPC: H01L21/00 ,  B82B3/00 ,  B22F7/04 ,  B29C70/02 ,  C03B19/12 ,  H05K3/40 ,  B22F3/22 ,  B22F3/10 ,  H01L21/768 ,  H01L21/48 ,  B81C99/00 ,  H01L21/56

CPC classification number: B82B3/0038 ,  B22F3/1021 ,  B22F3/22 ,  B22F7/04 ,  B29C70/02 ,  B81C99/0085 ,  C03B19/12 ,  H01L21/4867 ,  H01L21/563 ,  H01L21/76898 ,  H01L2224/32145 ,  H01L2924/1461 ,  H05K3/4053 ,  H05K2201/0215 ,  H05K2201/0305 ,  H05K2203/0425 ,  H01L2924/00

Abstract: A method for forming a functional part in a minute space includes the steps of: filling a minute space with a dispersion functional material in which a thermally-meltable functional powder is dispersed in a liquid dispersion medium; evaporating the liquid dispersion medium present in the minute space; and heating the functional powder and hardening it under pressure.