公开(公告)号：US20130277850A1

公开(公告)日：2013-10-24

申请号：US13859175

申请日：2013-04-09

申请人： NAPRA CO., LTD.

发明人： Shigenobu Sekine ,  Yurina Sekine

IPC分类号： H01L23/48

CPC分类号： H01L23/48 ,  H01B1/22 ,  H01L21/4867 ,  H01L21/563 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49883 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/16 ,  H01L31/022425 ,  H01L31/0682 ,  H01L33/62 ,  H01L2224/0332 ,  H01L2224/0341 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05205 ,  H01L2224/05209 ,  H01L2224/05211 ,  H01L2224/05213 ,  H01L2224/05318 ,  H01L2224/05324 ,  H01L2224/05338 ,  H01L2224/05339 ,  H01L2224/05344 ,  H01L2224/05347 ,  H01L2224/05355 ,  H01L2224/0536 ,  H01L2224/05366 ,  H01L2224/05369 ,  H01L2224/05562 ,  H01L2224/0569 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81375 ,  H01L2224/81395 ,  H01L2224/81505 ,  H01L2224/81509 ,  H01L2224/81511 ,  H01L2224/81513 ,  H01L2224/81618 ,  H01L2224/81624 ,  H01L2224/81638 ,  H01L2224/81639 ,  H01L2224/81644 ,  H01L2224/81647 ,  H01L2224/81655 ,  H01L2224/8166 ,  H01L2224/81666 ,  H01L2224/81669 ,  H01L2224/831 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2933/0016 ,  H01L2933/0066 ,  Y02E10/547 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： An electronic device includes a substrate and an electronic component. The substrate has a metallization trace. The metallization trace has a metallization layer and a synthetic resin layer. The metallization layer has a high-melting-point metallic component and a low-melting-point metallic component. The high-melting-point metallic component and the low-melting-point metallic component are diffusion bonded together and adhered to a surface of the substrate. The synthetic resin layer is formed simultaneously with the metallization layer to cover a surface of the metallization layer with a thickness in the range of 5 nm to 1000 nm. The electronic component is electrically connected to the metallization layer.

摘要翻译： 电子设备包括基板和电子部件。 衬底具有金属化迹线。 金属化迹线具有金属化层和合成树脂层。 金属化层具有高熔点金属成分和低熔点金属成分。 高熔点金属成分和低熔点金属成分被扩散接合在一起并附着在基板的表面。 合成树脂层与金属化层同时形成，以覆盖金属化层的表面，厚度在5nm至1000nm的范围内。 电子部件电连接到金属化层。