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    Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds
    6.
    发明授权
    Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds 失效
    复合材料，II的生长方法{11 {14} {11 {0化合物在基材上，以及制备化合物组合物的方法

    公开(公告)号：US3664866A

    公开(公告)日：1972-05-23

    申请号：US3664866D

    申请日：1970-04-08

    申请人： NORTH AMERICAN ROCKWELL

    发明人： MANASEVIT HAROLD M

    IPC分类号： H01L21/365 ,  B44D1/18

    CPC分类号： H01L21/0242 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S148/064 ,  Y10S148/15

    摘要： A composite comprises a substrate of monocrystalline structure which is either a hexagonal, cubic, rhombohedral or orthorhombic, and a monocrystalline layer on the substrate of a JQ compound formulation wherein J is at least one element selected from the group consisting of cadmium, zinc and mercury, and wherein Q is at least one element selected from the group consisting of sulfur, tellurium, selenium and/or oxygen. An alkyl or hydride type dopant may be used to provide a homogeneously doped layer. Processes for making the layer composition and for making the composite are described.

    摘要翻译： 复合材料包括单晶结构的基底，其为六方晶系，立方晶体，菱方晶或斜方晶，以及JQ化合物制剂的基材上的单晶层，其中J为选自镉，锌和汞的至少一种元素 ，并且其中Q是选自硫，碲，硒和/或氧的至少一种元素。 可以使用烷基或氢化物型掺杂剂来提供均匀掺杂的层。 描述了用于制备层组合物和制备复合材料的方法。

    Epitaxial growth process
    8.
    发明授权
    Epitaxial growth process 失效
    外延生长过程

    公开(公告)号：US3508962A

    公开(公告)日：1970-04-28

    申请号：US3508962D

    申请日：1966-02-03

    申请人： NORTH AMERICAN ROCKWELL

    发明人： MANASEVIT HAROLD M ,  SIMPSON WILLIAM I

    IPC分类号： C30B25/02 ,  H01L21/00 ,  C23C11/00

    CPC分类号： C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  Y10S148/025 ,  Y10S148/113 ,  Y10S148/15 ,  Y10S438/967

    摘要： 1,176,871. Epitaxial deposition. NORTH AMERICAN ROCKWELL CORP. Feb.1, 1967 [Feb.3, 1966], No.4794/67. Heading C7F. [Also in Division C1 ] In a process of epitaxial deposition of a semiconductor on a single crystal substrate, a densely nucleated first semi-conductor layer, formed by thermal decomposition of a hydride, is applied initially, before the main part of the semi-conductor film is added by thermal decomposition of a halide. Both the hydride and the halide may be carried in a hydrogen stream. The substrate may be sapphire, Be oxide, Mg oxide, Si, Ge, B, chrysoberyl, Ca fluoride, a group III-V compound or a group II-VI compound. Ge may be deposited from germane or other Ge hydrides, followed by trichlorogermane or Ge tetrahalides. Si and B may also be deposited. Semi-conductor devices may be fabricated in the films so formed.