发明授权
US3664866A Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds
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复合材料,II的生长方法{11 {14} {11 {0化合物在基材上,以及制备化合物组合物的方法
- 专利标题: Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds
- 专利标题(中): 复合材料,II的生长方法{11 {14} {11 {0化合物在基材上,以及制备化合物组合物的方法
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申请号: US3664866D申请日: 1970-04-08
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公开(公告)号: US3664866A公开(公告)日: 1972-05-23
- 发明人: MANASEVIT HAROLD M
- 申请人: NORTH AMERICAN ROCKWELL
- 专利权人: North American Rockwell Corp
- 当前专利权人: North American Rockwell Corp
- 优先权: US2657470 1970-04-08
- 主分类号: H01L21/365
- IPC分类号: H01L21/365 ; B44D1/18
摘要:
A composite comprises a substrate of monocrystalline structure which is either a hexagonal, cubic, rhombohedral or orthorhombic, and a monocrystalline layer on the substrate of a JQ compound formulation wherein J is at least one element selected from the group consisting of cadmium, zinc and mercury, and wherein Q is at least one element selected from the group consisting of sulfur, tellurium, selenium and/or oxygen. An alkyl or hydride type dopant may be used to provide a homogeneously doped layer. Processes for making the layer composition and for making the composite are described.
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