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公开(公告)号：US20210351776A1
公开(公告)日：2021-11-11
申请号：US17314127
申请日：2021-05-07
Inventor： Byong Guk Park , Kab-Jin Kim , Geun-hee Lee
Abstract: Disclosed is a magnetic logic device including: a plurality of input branches configured by a magnetic nanowire including a non-magnetic metallic layer, a free layer, and an insulating layer sequentially stacked; an output branch configured by the magnetic nanowire; a coupling portion configured by the magnetic nanowire and where the input branches and the output branch meet; gate electrodes arranged adjacent to the insulating layer in each of the plurality of input branches; and in-plane anisotropic ferromagnetic layers arranged adjacent to the non-magnetic metallic layer in each of the plurality of input branches.
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公开(公告)号：US10276780B2
公开(公告)日：2019-04-30
申请号：US15868837
申请日：2018-01-11
Inventor： Byong Guk Park , Dong Jun Kim , Chul Yeon Jeon
Abstract: Semiconductor devices and semiconductor device control methods are described. A semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.
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公开(公告)号：US11730065B2
公开(公告)日：2023-08-15
申请号：US17359822
申请日：2021-06-28
Inventor： Byong Guk Park , Min-Gu Kang , Jong-Guk Choi
CPC classification number: H10N52/80 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H10B61/00 , H10N52/00
Abstract: Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.
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公开(公告)号：US10360963B2
公开(公告)日：2019-07-23
申请号：US15723278
申请日：2017-10-03
Inventor： Byong Guk Park , Seung Heon Baek , Kyung Woong Park
IPC: G11C11/00 , G11C11/16 , H01L27/22 , H01L43/08 , H03K19/18 , G11C11/18 , G11C11/56 , H01L43/06 , H03K19/20
Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
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公开(公告)号：US20190189175A1
公开(公告)日：2019-06-20
申请号：US16285948
申请日：2019-02-26
Inventor： Byong Guk Park , Seung Heon Baek , Kyung Woong Park
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1697 , G11C11/18 , G11C11/5607 , H01L27/228 , H01L43/06 , H01L43/08 , H03K19/18 , H03K19/20
Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
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Patent Agency Ranking
公开(公告)号：US20170200885A1
公开(公告)日：2017-07-13
申请号：US15346170
申请日：2016-11-08
Inventor： Byong Guk Park , Hae Yeon Lee
Abstract: The present invention relates to a magnetic memory device comprising: a fixed magnetic layer; an insulation layer arranged on the fixed magnetic layer; a free magnetic layer arranged on the insulation layer; a second non-magnetic layer arranged on the free magnetic layer; and a first non-magnetic layer arranged on the second non-magnetic layer, wherein the second non-magnetic layer may include an element in the Periodic Table III-V periods.
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公开(公告)号：US20210082487A1
公开(公告)日：2021-03-18
申请号：US17091103
申请日：2020-11-06
Inventor： Byong Guk Park , Seung Heon Baek , Kyung Woong Park
Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
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公开(公告)号：US20180205004A1
公开(公告)日：2018-07-19
申请号：US15868837
申请日：2018-01-11
Inventor： Byong Guk Park , Dong Jun Kim , Chul Yeon Jeon
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01L43/08 , H01L43/10
Abstract: The present invention relates to a semiconductor device and a semiconductor device control method. According to an example of the present invention, the semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.
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公开(公告)号：US20180114557A1
公开(公告)日：2018-04-26
申请号：US15723278
申请日：2017-10-03
Inventor： Byong Guk Park , Seung Heon Baek , Kyung Woong Park
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1697 , G11C11/18 , G11C11/5607 , H01L27/228 , H01L43/06 , H01L43/08 , H03K19/18 , H03K19/20
Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
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公开(公告)号：US11362661B2
公开(公告)日：2022-06-14
申请号：US17314127
申请日：2021-05-07
Inventor： Byong Guk Park , Kab-Jin Kim , Geun-hee Lee
Abstract: Disclosed is a magnetic logic device including: a plurality of input branches configured by a magnetic nanowire including a non-magnetic metallic layer, a free layer, and an insulating layer sequentially stacked; an output branch configured by the magnetic nanowire; a coupling portion configured by the magnetic nanowire and where the input branches and the output branch meet; gate electrodes arranged adjacent to the insulating layer in each of the plurality of input branches; and in-plane anisotropic ferromagnetic layers arranged adjacent to the non-magnetic metallic layer in each of the plurality of input branches.
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