公开(公告)号：US11730065B2

公开(公告)日：2023-08-15

申请号：US17359822

申请日：2021-06-28

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byong Guk Park ,  Min-Gu Kang ,  Jong-Guk Choi

IPC: G11C11/00 ,  H10N52/80 ,  G11C11/18 ,  G11C11/16 ,  H10B61/00 ,  H10N52/00

CPC classification number: H10N52/80 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H10B61/00 ,  H10N52/00

Abstract: Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.