公开(公告)号：US20170200885A1

公开(公告)日：2017-07-13

申请号：US15346170

申请日：2016-11-08

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byong Guk Park ,  Hae Yeon Lee

IPC: H01L43/08 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: The present invention relates to a magnetic memory device comprising: a fixed magnetic layer; an insulation layer arranged on the fixed magnetic layer; a free magnetic layer arranged on the insulation layer; a second non-magnetic layer arranged on the free magnetic layer; and a first non-magnetic layer arranged on the second non-magnetic layer, wherein the second non-magnetic layer may include an element in the Periodic Table III-V periods.