公开(公告)号：US10276780B2

公开(公告)日：2019-04-30

申请号：US15868837

申请日：2018-01-11

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byong Guk Park ,  Dong Jun Kim ,  Chul Yeon Jeon

IPC: G11C11/00 ,  H01L43/02 ,  H01L43/08 ,  H01F10/32 ,  G11C11/16 ,  H01L43/10

Abstract: Semiconductor devices and semiconductor device control methods are described. A semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.

公开(公告)号：US20180205004A1

公开(公告)日：2018-07-19

申请号：US15868837

申请日：2018-01-11

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byong Guk Park ,  Dong Jun Kim ,  Chul Yeon Jeon

IPC: H01L43/02 ,  H01L43/08 ,  H01F10/32 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

Abstract: The present invention relates to a semiconductor device and a semiconductor device control method. According to an example of the present invention, the semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.