公开(公告)号：US20160380182A1

公开(公告)日：2016-12-29

申请号：US15262821

申请日：2016-09-12

Applicant: KABUSHIKI KAISHA TOSHIBA ,  SK HYNIX INC.

Inventor： Daisuke WATANABE ,  Yang Kon KIM ,  Makoto NAGAMINE ,  Youngmin EEH ,  Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA ,  Guk Cheon KIM ,  Bo Mi LEE ,  Won Joon CHOI

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

Abstract translation: 根据一个实施例，提供了一种磁阻元件，包括第一磁性层，第一磁性层上的非磁性层和非磁性层上的第二磁性层，其中第一和第二磁性层中的一个包括Co中的一个 和Fe，以及具有比Co和Fe更高的标准电极电位的材料。

公开(公告)号：US20190079873A1

公开(公告)日：2019-03-14

申请号：US16186231

申请日：2018-11-09

Applicant: SK hynix Inc. ,  Toshiba Memory Corporation

Inventor： Yang-Kon KIM ,  Ki-Seon PARK ,  Bo-Mi LEE ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Daisuke WATANABE ,  Makoto NAGAMINE ,  Young-Min EEH ,  Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA

IPC: G06F12/0875 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10

Abstract: An electronic device includes semiconductor memory, the semiconductor memory including an under layer; a first magnetic layer located over the under layer and having a variable magnetization direction; a tunnel barrier layer located over the first magnetic layer; and a second magnetic layer located over the tunnel barrier layer and having a pinned magnetization direction, wherein the under layer includes a first metal nitride layer having a NaCl crystal structure and a second metal nitride layer containing a light metal.

公开(公告)号：US20140085971A1

公开(公告)日：2014-03-27

申请号：US14019415

申请日：2013-09-05

Applicant: Kabushiki Kaisha Toshiba

Inventor： Makoto NAGAMINE ,  Daisuke IKENO ,  Koji UEDA ,  Katsuya NISHIYAMA ,  Katsuaki NATORI ,  Koji YAMAKAWA

IPC: H01L43/02 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

Abstract translation: 根据一个实施例，磁阻效应元件包括以下结构。 第一铁磁层具有可变的磁化方向。 第二铁磁层具有不变的磁化方向。 在第一和第二铁磁层之间形成隧道势垒层。 第一铁磁层与隧道势垒层之间的能量势垒高于第二铁磁层与隧道势垒层之间的能量势垒。 第二铁磁层包含主要成分和添加元素。 主要成分含有Fe，Co和Ni中的至少一种。 添加元素含有Mg，Al，Ca，Sc，Ti，V，Mn，Zn，As，Sr，Y，Zr，Nb，Cd，In，Ba，La，Ce，Pr，Nd，Sm中的至少一种， Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Hf，Ta和W.

公开(公告)号：US20170263676A1

公开(公告)日：2017-09-14

申请号：US15261755

申请日：2016-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Koji UEDA ,  Makoto NAGAMINE ,  Kazuya SAWADA

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L28/00 ,  H01L43/02 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.

公开(公告)号：US20170117459A1

公开(公告)日：2017-04-27

申请号：US15397594

申请日：2017-01-03

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke WATANABE ,  Youngmin EEH ,  Kazuya SAWADA ,  Koji UEDA ,  Toshihiko NAGASE

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01F1/03 ,  H01F10/32

CPC classification number: H01L43/10 ,  H01F1/0306 ,  H01F10/30 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.

公开(公告)号：US20130299929A1

公开(公告)日：2013-11-14

申请号：US13785952

申请日：2013-03-05

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke WATANABE ,  Katsuya NISHIYAMA ,  Toshihiko NAGASE ,  Koji UEDA ,  Tadashi KAI

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element includes a first magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation; a second magnetic layer having an axis of magnetization perpendicular to the film surface and a changeable magnetization orientation; a first nonmagnetic layer arranged between the first and second magnetic layers; and a third magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation opposite that of the first magnetic layer. The first magnetic layer has a first magnetic material film in contact with the first nonmagnetic layer, a nonmagnetic material film in contact with the first magnetic material film, and a second magnetic material film containing Co100-xWx (0

Abstract translation: 磁阻元件包括具有垂直于膜表面的磁化轴的第一磁性层和固定的磁化取向; 具有垂直于膜表面的磁化轴的第二磁性层和可变磁化取向; 布置在第一和第二磁性层之间的第一非磁性层; 以及具有与膜表面垂直的磁化轴的第三磁性层和与第一磁性层相反的固定磁化方向。 第一磁性层具有与第一非磁性层接触的第一磁性材料膜，与第一磁性材料膜接触的非磁性材料膜和含有Co100-xWx（0

公开(公告)号：US20160315251A1

公开(公告)日：2016-10-27

申请号：US15198543

申请日：2016-06-30

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toshihiko NAGASE ,  Tadashi KAI ,  Youngmin EEH ,  Koji UEDA ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Hiroaki YODA

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

Abstract translation: 一种磁阻元件，包括第一磁性层; 设置在第一磁性层上的第一非磁性层，由SrTiO 3，SrFeO 3，LaAlO 3，NdCoO 3或BN形成的第一非磁性层; 以及设置在所述第一非磁性层上的第二磁性层，其中所述第一非磁性层与所述第一磁性层晶格匹配，并且所述第二磁性层与所述第一非磁性层晶格匹配。