Invention Application
- Patent Title: MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Patent Title (中): 磁性元件和磁记忆
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Application No.: US13785952Application Date: 2013-03-05
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Publication No.: US20130299929A1Publication Date: 2013-11-14
- Inventor: Daisuke WATANABE , Katsuya NISHIYAMA , Toshihiko NAGASE , Koji UEDA , Tadashi KAI
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Priority: JPP2012-106611 20120508
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12

Abstract:
A magnetoresistive element includes a first magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation; a second magnetic layer having an axis of magnetization perpendicular to the film surface and a changeable magnetization orientation; a first nonmagnetic layer arranged between the first and second magnetic layers; and a third magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation opposite that of the first magnetic layer. The first magnetic layer has a first magnetic material film in contact with the first nonmagnetic layer, a nonmagnetic material film in contact with the first magnetic material film, and a second magnetic material film containing Co100-xWx (0
Public/Granted literature
- US09153770B2 Magnetoresistive element and magnetic memory Public/Granted day:2015-10-06
Information query
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