知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.037 seconds)

    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    磁性元件及其制造方法

    公开(公告)号：US20160099406A1

    公开(公告)日：2016-04-07

    申请号：US14643866

    申请日：2015-03-10

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Katsuya NISHIYAMA ,  Koji YAMAKAWA

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a perpendicular and invariable magnetization, a first nonmagnetic insulating layer on the first magnetic layer, a second magnetic layer on the first nonmagnetic insulating layer, the second magnetic layer having a perpendicular and variable magnetization, a second nonmagnetic insulating layer on the second magnetic layer, and a nonmagnetic conductive layer on the second nonmagnetic insulating layer. The second nonmagnetic insulating layer includes a first metal oxide with a predetermined element. The first nonmagnetic insulating layer includes a second metal oxide.

    Abstract translation: 根据一个实施例，磁阻元件包括具有垂直和不变磁化的第一磁性层，第一磁性层上的第一非磁性绝缘层，第一非磁性绝缘层上的第二磁性层，第二磁性层具有垂直和 可变磁化，第二磁性层上的第二非磁性绝缘层，以及第二非磁性绝缘层上的非磁性导电层。 第二非磁性绝缘层包括具有预定元素的第一金属氧化物。 第一非磁性绝缘层包括第二金属氧化物。

    MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF 有权
    磁电效应元件及其制造方法

    公开(公告)号：US20140284732A1

    公开(公告)日：2014-09-25

    申请号：US13961805

    申请日：2013-08-07

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Makoto NAGAMINE ,  Daisuke IKENO ,  Katsuya NISHIYAMA ,  Katsuaki NATORI ,  Koji YAMAKAWA

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  H01L43/12

    Abstract: According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.

    Abstract translation: 根据一个实施例，磁阻效应元件包括第一铁磁层，形成在第一铁磁层上的隧道势垒和形成在隧道势垒层上的第二铁磁层。 隧道势垒包括具有尖晶石结构的非磁性氧化物。 组合尖晶石结构的氧化物组合使得单相通过固相在包含对应于尖晶石结构的组分比例并且具有不小于2％的宽度的组分比区域中形成。

    MAGNETIC MEMORY DEVICE
    5.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20170263852A1

    公开(公告)日：2017-09-14

    申请号：US15270672

    申请日：2016-09-20

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Jyunichi OZEKI ,  Hiroyuki OHTORI ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Katsuya NISHIYAMA

    IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

    CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction, a second magnetic layer having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the first magnetization direction, a third magnetic layer provided between the first and second magnetic layers, having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the second magnetization direction, and having a side surface including a recess portion, and a nonmagnetic layer provided between the first and third magnetic layers.

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    6.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20130299929A1

    公开(公告)日：2013-11-14

    申请号：US13785952

    申请日：2013-03-05

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Daisuke WATANABE ,  Katsuya NISHIYAMA ,  Toshihiko NAGASE ,  Koji UEDA ,  Tadashi KAI

    IPC: H01L43/02 ,  H01L43/12

    CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetoresistive element includes a first magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation; a second magnetic layer having an axis of magnetization perpendicular to the film surface and a changeable magnetization orientation; a first nonmagnetic layer arranged between the first and second magnetic layers; and a third magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation opposite that of the first magnetic layer. The first magnetic layer has a first magnetic material film in contact with the first nonmagnetic layer, a nonmagnetic material film in contact with the first magnetic material film, and a second magnetic material film containing Co100-xWx (0

    Abstract translation: 磁阻元件包括具有垂直于膜表面的磁化轴的第一磁性层和固定的磁化取向; 具有垂直于膜表面的磁化轴的第二磁性层和可变磁化取向; 布置在第一和第二磁性层之间的第一非磁性层; 以及具有与膜表面垂直的磁化轴的第三磁性层和与第一磁性层相反的固定磁化方向。 第一磁性层具有与第一非磁性层接触的第一磁性材料膜，与第一磁性材料膜接触的非磁性材料膜和含有Co100-xWx（0

    MAGNETORESISTIVE EFFECT ELEMENT
    7.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT 有权
    磁感应效应元件

    公开(公告)号：US20140085971A1

    公开(公告)日：2014-03-27

    申请号：US14019415

    申请日：2013-09-05

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Makoto NAGAMINE ,  Daisuke IKENO ,  Koji UEDA ,  Katsuya NISHIYAMA ,  Katsuaki NATORI ,  Koji YAMAKAWA

    IPC: H01L43/02 ,  G11C11/16

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

    Abstract: According to one embodiment, a magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

    Abstract translation: 根据一个实施例，磁阻效应元件包括以下结构。 第一铁磁层具有可变的磁化方向。 第二铁磁层具有不变的磁化方向。 在第一和第二铁磁层之间形成隧道势垒层。 第一铁磁层与隧道势垒层之间的能量势垒高于第二铁磁层与隧道势垒层之间的能量势垒。 第二铁磁层包含主要成分和添加元素。 主要成分含有Fe，Co和Ni中的至少一种。 添加元素含有Mg，Al，Ca，Sc，Ti，V，Mn，Zn，As，Sr，Y，Zr，Nb，Cd，In，Ba，La，Ce，Pr，Nd，Sm中的至少一种， Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Hf，Ta和W.

Patent Agency Ranking