Invention Application
- Patent Title: MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 磁电效应元件及其制造方法
-
Application No.: US13961805Application Date: 2013-08-07
-
Publication No.: US20140284732A1Publication Date: 2014-09-25
- Inventor: Makoto NAGAMINE , Daisuke IKENO , Katsuya NISHIYAMA , Katsuaki NATORI , Koji YAMAKAWA
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12
Abstract:
According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.
Public/Granted literature
- US09070866B2 Magnetoresistive effect element and manufacturing method thereof Public/Granted day:2015-06-30
Information query
IPC分类:
